生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.71 | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 7.2 A | 最大漏源导通电阻: | 0.05 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-261 |
JESD-30 代码: | R-PDSO-G4 | 端子数量: | 4 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
NDT451N | FAIRCHILD | N-Channel Enhancement Mode Field Effect Transistor |
获取价格 |
|
NDT451N | TI | 5.5A, 30V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261 |
获取价格 |
|
NDT451N/D84Z | TI | 5.5A, 30V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261 |
获取价格 |
|
NDT451N/J23Z | TI | 5.5A, 30V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET |
获取价格 |
|
NDT451ND84Z | FAIRCHILD | Power Field-Effect Transistor, 5.5A I(D), 30V, 0.05ohm, 1-Element, N-Channel, Silicon, Met |
获取价格 |
|
NDT451NJ23ZD84Z | FAIRCHILD | Power Field-Effect Transistor, 5.5A I(D), 30V, 0.05ohm, 1-Element, N-Channel, Silicon, Met |
获取价格 |