是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SOT-223 | 包装说明: | SOT-223, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.76 |
其他特性: | LOGIC LEVEL COMPATIBLE | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 3.7 A | 最大漏极电流 (ID): | 4 A |
最大漏源导通电阻: | 0.1 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 3 W | 最大脉冲漏极电流 (IDM): | 25 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDT3055LL84Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal- | |
NDT3055LL99Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal- | |
NDT3055LTNR | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal- | |
NDT3055LTNR_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal- | |
NDT35N06 | KEXIN |
获取价格 |
N-Channel MOSFET | |
NDT40N06 | KEXIN |
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N-Channel MOSFET | |
NDT40P04 | KEXIN |
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P-Channel MOSFET | |
NDT40P06 | KEXIN |
获取价格 |
P-Channel MOSFET | |
NDT410EL | FAIRCHILD |
获取价格 |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | |
NDT410EL | TI |
获取价格 |
2.1A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261 |