Datasheet > NDT40P04

NDT40P04

更新时间： 2024-09-30 18:10:07

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	1606K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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NDT40P04 数据手册

SMD Type

MOSFET

P-Channel MOSFET

NDT40P04

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

+0.2

-0.2

5.30

0.50

■ Features

● VDS (V) =-40V

● ID =-40 A (VGS =-10V)

0.127

max

● R^DS(ON)＜ 14mΩ (VGS =-10V)

+0.1

-0.1

0.80

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E^AS

1 Gate

2 Drain

+ 0.1

- 0.1

0.60

2.3

4.60

3 Source

4 Drain

+0.15

-0.15

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

-40

Unit

Gate-Source Voltage

±20

-40

Continuous Drain Current

Tc=25℃

-25

Pulsed Drain Current

Power Dissipation

Derating factor

-50

0.53

544

W/℃

Single Pulse Avalanche Energy

(Note.1)

Thermal Resistance.Junction- to-Case

Junction Temperature

thJC

1.88

175

℃/W

℃

Junction Storage Temperature Range

stg

-55 to 175

Note.1:EAS condition: Tj=25℃,V^DD=-20V,VG=-10V,L=1mH,Rg=25Ω,I^AS=33A

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