Datasheet > NDT3055L(J23Z)

NDT3055L(J23Z)

更新时间： 2024-11-15 23:53:27

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
5页	84K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 3.7A I(D) \| SOT-223

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NDT3055L(J23Z) 数据手册

August 1998

NDT3055L

N-Channel Logic Level Enhancement Mode Field Effect Transistor

General Description

Features

These logic level N-Channel enhancement mode power

field effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This

very high density process is especially tailored to

minimize on-state resistance and provide superior

switching performance, and withstand high energy pulse

in the avalanche and commutation modes. These devices

are particularly suited for low voltage applications such as

DC motor control and DC/DC conversion where fast

switching, low in-line power loss, and resistance to

transients are needed.

4 A, 60 V. R_DS(ON)= 0.100 W @ V_GS= 10 V,

R_DS(ON)= 0.120 W @ V_GS= 4.5 V.

Low drive requirements allowing operation directly from logic

drivers. V_GS(TH)< 2V.

High density cell design for extremely low R_DS(ON)

High power and current handling capability in a widely used

surface mount package.

SuperSOT^TM-3

SuperSOT^TM-8

SO-8

SuperSOT^TM-6

SOIC-16

SOT-223

(J23Z)

Absolute Maximum Ratings T_A= 25^oC unless otherwise noted

Symbol Parameter

NDT3055L

Units

Drain-Source Voltage

V_DSS

V_GSS

I_D

Gate-Source Voltage - Continuous

±20

Maximum Drain Current - Continuous

- Pulsed

(Note 1a)

P_D

Maximum Power Dissipation

(Note 1b)

(Note 1c)

1.3

1.1

T_J,T_STG

Operating and Storage Temperature Range

-65 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Case

°C/W

R_q_JA

R_q_JC

(Note 1)

* Order option J23Z for cropped center drain lead.

NDT3055L Rev.A1

12 3 4 5

中文翻译

下载PDF

与NDT3055L(J23Z)相关器件

型号	品牌	获取价格	描述	数据表
NDT3055L/D84Z	TI	获取价格	3.7A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
NDT3055L/L99Z	TI	获取价格	3.7A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
NDT3055L/S62Z	TI	获取价格	3.7A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
NDT3055L84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-
NDT3055L99Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-
NDT3055LD84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-
NDT3055LJ23Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-
NDT3055LL84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-
NDT3055LL99Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-
NDT3055LTNR	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-