生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.74 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 2.5 A | 最大漏源导通电阻: | 0.3 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-261 |
JESD-30 代码: | R-PDSO-G4 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | P-CHANNEL | 功耗环境最大值: | 1.1 W |
最大脉冲漏极电流 (IDM): | 15 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 最大关闭时间(toff): | 60 ns |
最大开启时间(吨): | 55 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDT2955/L99Z | TI |
获取价格 |
2.5A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261 | |
NDT2955/S62Z | TI |
获取价格 |
2.5A, 60V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-261 | |
NDT2955_02 | FAIRCHILD |
获取价格 |
P-Channel Enhancement Mode Field Effect Transistor | |
NDT2955_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Meta | |
NDT2955D84Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Meta | |
NDT2955J23Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Meta | |
NDT2955L84Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Meta | |
NDT2955S62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Meta | |
NDT2N60 | KEXIN |
获取价格 |
N-Channel MOSFET | |
NDT2N60P | KEXIN |
获取价格 |
N-Channel MOSFET |