Datasheet > NDT3055L

NDT3055L

更新时间： 2024-09-30 17:15:55

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	361K
描述
种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时）:4.5A;Vgs(th)(V):±20;漏源导通电阻:100mΩ@10V

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NDT3055L 数据手册

NDT3055

60V N-Channel

UMW

General Description

These logic level N-Channel enhancement This very

high

minimize

density

process

is especially tailored to

resistance and provide

on-state

superior switching performance, and withstand high

energy pulse in the avalanche and commutation

modes. These devices are particularly suited for

low voltage applications such as DC motor control

and DC/DC conversion where fast switching, low in-

line power loss, and resistance to transients are

needed.

Features

VDS (V) = 60V

RDS(ON)

100m

50m

(V GS

10V)

4.5V)

Low drive requirements allowing operation directly from logic

drivers. V_GS(TH)< 2V.

High density cell design for extremely low R_DS(ON)

High power and current handling capability in a widely used

surface mount package.

Absolute Maximum Ratings T_A= 25^oC unless otherwise noted

Symbol Parameter

NDT3055L

Units

Drain-Source Voltage

V_DSS

V_GSS

I_D

Gate-Source Voltage - Continuous

±20

Maximum Drain Current - Continuous

- Pulsed

(Note 1a)

P_D

Maximum Power Dissipation

(Note 1b)

(Note 1c)

1.3

1.1

T_J,T_STG

Operating and Storage Temperature Range

-65 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Case

°C/W

R_q_JA

R_q_JC

(Note 1)

* Order option J23Z for cropped center drain lead.

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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与NDT3055L相关器件

型号	品牌	获取价格	描述	数据表
NDT3055L(J23Z)	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 3.7A I(D) \| SOT-223
NDT3055L/D84Z	TI	获取价格	3.7A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
NDT3055L/L99Z	TI	获取价格	3.7A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
NDT3055L/S62Z	TI	获取价格	3.7A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261
NDT3055L84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-
NDT3055L99Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-
NDT3055LD84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-
NDT3055LJ23Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-
NDT3055LL84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-
NDT3055LL99Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-