Datasheet > NDT2955_02

NDT2955_02

更新时间： 2024-11-16 03:46:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管场效应晶体管
页数	文件大小	规格书
5页	128K
描述
P-Channel Enhancement Mode Field Effect Transistor

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NDT2955_02 数据手册

April 2002

NDT2955

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

This 60V P-Channel MOSFET is produced using

Fairchild Semiconductor’s high voltage Trench process.

It has been optimized for power management

plications.

• –2.5 A, –60 V. R_DS(ON)= 300mΩ @ V_GS= –10 V

R_DS(ON)= 500mΩ @ V_GS= –4.5 V

• High density cell design for extremely low R_DS(ON)

Applications

• High power and current handling capability in a widely

•

DC/DC converter

used surface mount package.

Power management

SOT-223

(J23Z)

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

–60

Units

V_GSS

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±20

I_D

(Note 1a)

–2.5

–15

P_D

Maximum Power Dissipation

(Note 1a)

(Note 1b)

(Note 1c)

3.0

1.3

1.1

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

R_θJA

°C/W

Thermal Resistance, Junction-to-Case

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

NDT2955

13’’

12mm

2500 units

NDT2955 Rev. C

2002 Fairchild Semiconductor Corporation

12 3 4 5

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