Datasheet > NDT2N60

NDT2N60

更新时间： 2024-09-29 18:09:43

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	1628K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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NDT2N60 数据手册

SMD Type

MOSFET

N-Channel MOSFET

NDT2N60

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

+0.2

-0.2

5.30

0.50

■ Features

● VDS (V) = 600V

● ID = 2 A (VGS = 10V)

● R^DS(ON)＜ 4.5Ω (VGS = 10V)

● Low Gate Charge

0.127

max

+0.1

-0.1

0.80

● Low Reverse transfer capacitances

1 Gate

2 Drain

+ 0.1

- 0.1

0.60

2.3

4.60

+0.15

-0.15

3 Source

4 Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

600

±30

3000

Unit

Gate-Source Voltage

Gate source ESD (HBM-C= 100pF, R=1.5kΩ)

ESD

Continuous Drain Current

1.45

Tc=100℃

Pulsed Drain Current

Avalanche Current

1.1

6.4

Avalanche Energy ,Repetitive

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

(Note.1)

(Note.2)

dv/dt

V/ns

Derating Factor above 25°C

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Lead

Junction Temperature

0.28

W/℃

thJA

thJL

℃/W

3.57

150

300

MaximumTemperature for Soldering

Storage Temperature Range

℃

stg

-55 to 150

Note.1:L=10mH, I

D=4A, Start TJ=25℃

Note.2:I^SD=2A,di/dt ≤100A/us,VDD≤BVDS, Start T

=25℃

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