Datasheet > NDT2955(J23Z)

NDT2955(J23Z)

更新时间： 2022-01-18 17:09:00

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
6页	94K
描述
TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 2.5A I(D) \| SOT-223

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NDT2955(J23Z) 数据手册

September 1996

NDT2955

P-Channel Enhancement Mode Field Effect Transistor

General Description

Features

Power SOT P-Channel enhancement mode power field

effect transistors are produced using Fairchild's

proprietary, high cell density, DMOS technology. This very

high density process is especially tailored to minimize

on-state resistance and provide superior switching

performance. These devices are particularly suited for low

voltage applications such as notebook computer power

management and DC motor control.

-2.5A, -60V. R_DS(ON)= 0.3W @ V_GS= -10V.

High density cell design for extremely low R_DS(ON)

High power and current handling capability in a widely used

surface mount package.

_______________________________________________________________________________________________________

Absolute Maximum Ratings

T_A= 25°C unless otherwise noted

Symbol Parameter

NDT2955

-60

Units

V_DSS

V_GSS

I_D

Drain-Source Voltage

Gate-Source Voltage

±20

Drain Current

- Continuous

- Pulsed

Maximum Power Dissipation

(Note 1a)

-2.5

-15

P_D

1.3

(Note 1b)

(Note 1c)

1.1

T_J,T_STG

Operating and Storage Temperature Range

-65 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

°C/W

Thermal Resistance, Junction-to-Case

* Order option J23Z for cropped center drain lead.

NDT2955 Rev. B2

12 3 4 5 6

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