NDD02N40, NDT02N40
N-Channel Power MOSFET
400 V, 5.5 W
Features
• 100% Avalanche Tested
• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
http://onsemi.com
Compliant
V
R
MAX
DS(ON)
(BR)DSS
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
400 V
5.5 W @ 10 V
N−Channel MOSFET
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current R
Symbol
NDD
NDT
Unit
V
V
DSS
400
20
D (2)
V
GS
V
I
D
1.7
1.1
39
0.4
0.25
2.0
A
q
JC
Steady State, T = 25°C (Note 1)
C
Continuous Drain Current R
I
D
A
q
JC
G (1)
Steady State, T = 100°C (Note 1)
C
Power Dissipation – R
P
D
W
q
JC
S (3)
Steady State, T = 25°C
C
MARKING
DIAGRAMS
Pulsed Drain Current
I
6.9
1.7
1.6
0.4
A
A
DM
Continuous Source Current (Body
Diode)
I
S
4
Drain
Single Pulse Drain−to−Source
EAS
120
260
mJ
°C
°C
4
DPAK
CASE 369C
(Surface Mount)
STYLE 2
Avalanche Energy, I = 1 A
D
Maximum Temperature for Soldering
Leads
T
L
2
1
3
Operating Junction and Storage
Temperature
T , T
−55 to +150
2
J
STG
1
3
Drain
Gate
Source
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature
4
Drain
4
IPAK
CASE 369D
2. I = 1.7 A, di/dt ≤ 100 A/ms, V ≤ BV
, T = +150°C
J
S
DD
DSS
(Straight Lead)
STYLE 2
THERMAL RESISTANCE
Parameter
1
2
Symbol
Value
Unit
°C/W
°C/W
3
Y
= Year
Junction−to−Case (Drain)
NDD02N40
R
R
3.2
q
JC
JA
1
2
3
WW
2N40
G
= Work Week
= Device Code
Junction−to−Ambient Steady State
q
Gate Drain Source
NDD02N40 (Note 4)
NDD02N40−1 (Note 3)
NDT02N40 (Note 4)
NDT02N40 (Note 5)
39
96
62
= Pb−Free Package
Drain
4
4
SOT−223
CASE 318E
STYLE 3
151
AYW
1
3. Insertion mounted
2
3
2N40G
4. Surface mounted on FR4 board using 1″ sq. pad size
A
Y
W
2N40
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb−Free Package
(Cu area = 1.127″ sq. [2 oz] including traces)
G
5. Surface−mounted on FR4 board using minimum recommended pad size
(Cu area = 0.026” sq. [2 oz]).
1
2
3
Gate Drain Source
G
(*Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
July, 2014 − Rev. 4
NDD02N40/D