Datasheet > NDT02N60ZT3G

NDT02N60ZT3G

更新时间： 2024-11-17 01:12:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	110K
描述
N-Channel Power MOSFET

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中文翻译

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数据手册
替代型号

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NDT02N60ZT3G 数据手册

NDT02N60Z

N-Channel Power MOSFET

600 V, 8.0 W

Features

• 100% Avalanche Tested

• Extremely High dv/dt Capability

• Gate Charge Minimized

http://onsemi.com

• Zener−protected

MAX

DS(ON)

(BR)DSS

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS

Compliant

600 V

8.0 W @ 10 V

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

N−Channel

D (2, 4)

Parameter

Drain−to−Source Voltage

Symbol

Value

600

Unit

DSS

Gate−to−Source Voltage

Continuous Drain Current R

0.3

Steady State, T = 25°C

G (1)

Continuous Drain Current R

0.21

2.0

Steady State, T = 100°C

S (3)

Power Dissipation – R

Steady State, T = 25°C

MARKING

DIAGRAM

Pulsed Drain Current

Continuous Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

2.2

Drain

EAS

Energy (I = 1.4 A)

SOT−223

CASE 318E

STYLE 3

AYW

2N60ZG

Peak Diode Recovery (Note 1)

dV/dt

4.5

V/ns

°C

Maximum Temperature for Soldering Leads

260

Operating Junction and Storage Temperature T , T

−55 to

+150

°C

STG

Gate Drain Source

= Assembly Location

= Year

= Work Week

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. I < 2.2 A, di/dt ≤ 200 A/ms, V ≤ BV

, T = +150°C

2N60Z = Specific Device Code

DSS

= Pb−Free Package

(Note: Microdot may be in either location)

THERMAL RESISTANCE

Parameter

Symbol

Value

Unit

Junction−to−Ambient Steady State

°C/W

NDT02N60Z (Note 2)

NDT02N60Z (Note 3)

148

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

2. Surface mounted on FR4 board using 1″ sq. pad size

(Cu area = 1.127″ sq. [2 oz] including traces)

3. Surface−mounted on FR4 board using minimum recommended pad size

(Cu area = 0.026” sq. [2 oz]).

Publication Order Number:

May, 2014 − Rev. 0

NDT02N60Z/D

12 3 4 5 6

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NDT02N60ZT3G 替代型号

型号	品牌	替代类型	描述	数据表
STN1HNK60	STMICROELECTRONICS	功能相似	N-CHANNEL 600V - 8-ohm - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH-TM MOSFET

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