Datasheet > NDT20P04

NDT20P04

更新时间： 2024-11-17 18:09:47

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科信 - KEXIN		/
页数	文件大小	规格书
5页	396K
描述
P-Channel MOSFET

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中文翻译

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数据手册

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NDT20P04 数据手册

SMD Type

MOSFET

P-Channel MOSFET

NDT20P04

TO-252

■ Features

● VDS (V) = -40V

● ID = -20A

● RDS(ON) < 33.5mΩ @ VGS = -10V

● RDS(ON) < 43mΩ @ VGS = -4.5V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high EAS

1. Gate (G)

2. Drain (D)

3. Source (S)

■ Absolute Maximum Ratings (T

= 25℃ Unless otherwise noted)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

-40

±20

-20

(TC

= 100℃)

-12.5

-25

Single pulse avalanche energy

Power Dissipation

(Note 1)

(Note 2)

272

Thermal Resistance, Junction- to-Case

Junction Temperature

RᶿJC

1.88

175

℃/W

℃

Junction Storage Temperature Range

Notes:

Tstg

-55 to 175

1. EAS condition: Tj=25℃,VDD=-20V,VG=-10V,L=1mH,Rg=25Ω,IAS=16.5A

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

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