Datasheet > NDT06N02

NDT06N02

更新时间： 2024-11-17 18:09:55

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	1958K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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NDT06N02 数据手册

SMD Type

MOSFET

N-Channel MOSFET

NDT06N02

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

+0.2

-0.2

5.30

0.50

■ Features

● V^{DS (V)}= 22V

● ID = 60 A (VGS = 10V)

● R^DS(ON)＜ 4.1mΩ (VGS = 10V)

● R^DS(ON)＜ 5.9mΩ (VGS = 4.5V)

0.127

max

+0.1

-0.1

0.80

1 Gate

2 Drain

+ 0.1

- 0.1

0.60

2.3

4.60

+0.15

-0.15

3 Source

4 Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

Unit

Gate-Source Voltage

±12

=25℃

=70℃

=25℃

=70℃

Continuous Drain Current

(Note.1)

Pulsed Drain Current

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L = 0.1 mH

125

=25℃

=70℃

=25℃

=70℃

Power Dissipation

(Note.1)

5.4

3.4

(Note.1)

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

Junction Temperature

thJA

thJC

℃/W

1.5

150

℃

Storage Temperature Range

stg

-55 to 150

Note.1: Surface Mounted on 1" x 1" FR4 board (t = 10s.)

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