Datasheet > NDT1N70

NDT1N70

更新时间： 2024-09-29 18:10:07

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页数	文件大小	规格书
4页	1482K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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NDT1N70 数据手册

SMD Type

MOSFET

N-Channel MOSFET

NDT1N70

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.8

-0.7

■ Features

+0.2

-0.2

5.30

0.50

● V^{DS (V)}= 700V

● ID = 1.2 A (VGS = 10V)

● R^DS(ON)＜ 13.5Ω (VGS = 10V)

● Fast switching capability

2.Drain

0.127

max

+0.1

-0.1

0.80

0.1

0.60⁺_-

1 Gate

2.3

4.60

1.Gate

+0.15

-0.15

2 Drain

3 Source

3.Source

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

700

±30

1.2

Unit

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

4.8

Avalanche Current

Avalanche Energy

(Note.1)

1.2

Single Pulsed (Note.2)

Repetitive (Note.1)

Peak Diode Recovery dv/dt (Note.3)

Power Dissipation

dv/dt

4.5

V/ns

Thermal Resistance.Junction- to-Ambient

Thermal Resistance.Junction- to-Case

Junction Temperature

thJA

thJC

℃/W

150

-55 to 150

℃

Storage Temperature Range

Tstg

Note.1: Repetitive Rating: Pulse width limited by maximum junction temperature

Note.2: L = 60mH, I^AS= 1A, VDD = 50V, R = 25Ω, Starting T = 25°C

Note.3: I^SD≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting T = 25°C

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