Datasheet > NDT2955 (KDT2955)

NDT2955 (KDT2955)

更新时间： 2024-11-17 18:09:19

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	1537K
描述
P-Channel MOSFET

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数据手册

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NDT2955 (KDT2955) 数据手册

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SMD Type

MOSFET

P-Channel MOSFET

NDT2955 (KDT2955)

Unit:mm

SOT-223

6.50±0.2

3.00±0.1

■ Features

● V^{DS (V)}=-60V

● ID =-2.5 A (VGS =-10V)

● R^DS(ON)＜ 300mΩ (VGS =-10V)

● R^DS(ON)＜ 500mΩ (VGS =-4.5V)

0.250

2.30 (typ)

Gauge Plane

1.Gate

2.Drain

3.Source

4.Drain

0.70±0.1

4.60 (typ)

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

-60

Unit

Gate-Source Voltage

±20

-2.5

-15

Continuous Drain Current

Pulsed Drain Current

(Note.1)

Power Dissipation

(Note.2)

(Note.3)

1.3

1.1

Thermal Resistance.Junction- to-Ambient (Note.1)

Thermal Resistance.Junction- to-Case

Junction Temperature

thJA

thJC

℃/W

150

℃

Junction Storage Temperature Range

stg

-55 to 150

Note.1: 42°C/W when mounted on a 1in²pad of 2 oz copper

Note.2: 95°C/W when mounted on a .0066 in pad of 2 oz copper

Note.3: 110°C/W when mounted on a minimum pad.

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