Datasheet > NDT110N03

NDT110N03

更新时间： 2024-09-29 18:09:55

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	346K
描述
N-Channel MOSFET

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数据手册

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NDT110N03 数据手册

SMD Type

MOSFET

N-Channel MOSFET

NDT110N03

TO-252

Unit: mm

+0.15

-0.15

6.50

+0.1

-0.1

2.30

+0.08

-0.07

+0.2

■ Features

5.30

-0.2

0.50

● VDS (V) = 30V

● ID = 110 A (VGS = 10V)

● R^DS(ON)＜ 4mΩ (VGS = 10V)

● R^DS(ON)＜ 6mΩ (V^GS= 4.5V)

0.127

max

+0.1

-0.1

0.80

● High Power and current handing capability

● Lead free product is acquired

● Surface Mount Package

0.1

0.60⁺_-

2.3

4.60

1 Gate

2 Drain

+0.15

-0.15

3 Source

4 Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

Unit

Gate-Source Voltage

±20

110

Tc=25℃

Tc=70℃

Continuous Drain Current

Pulsed Drain Current

Power Dissipation

300

100

Tc=25℃

Tc=70℃

Repetitive Avalanche Energy (Note.1)

Thermal Resistance.Junction- to-Case

Junction Temperature

150

1.5

RthJC

℃/W

175

℃

Storage Temperature Range

stg

-55 to 175

Note.1:EAS condition: TJ=25℃,VDD=20V,VG=10V, RG=25Ω

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