生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.68 | Is Samacsys: | N |
其他特性: | LOGIC LEVEL COMPATIBLE | 配置: | SINGLE |
最小漏源击穿电压: | 80 V | 最大漏极电流 (ID): | 17 A |
最大漏源导通电阻: | 0.1 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 60 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDP508BS62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 17A I(D), 80V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal | |
NDP510A | FAIRCHILD |
获取价格 |
N-Channel Enhancement Mode Field Effect Transistor | |
NDP510AE | FAIRCHILD |
获取价格 |
N-Channel Enhancement Mode Field Effect Transistor | |
NDP510AEL | TI |
获取价格 |
15A, 100V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
NDP510AES62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 15A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Met | |
NDP510AL | TI |
获取价格 |
15A, 100V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | |
NDP510AS62Z | FAIRCHILD |
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Power Field-Effect Transistor, 15A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Met | |
NDP510B | FAIRCHILD |
获取价格 |
N-Channel Enhancement Mode Field Effect Transistor | |
NDP510BE | FAIRCHILD |
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N-Channel Enhancement Mode Field Effect Transistor | |
NDP510BEL | NSC |
获取价格 |
TRANSISTOR 13 A, 100 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET |