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NDP508BL PDF预览

NDP508BL

更新时间: 2024-09-20 18:18:47
品牌 Logo 应用领域
美国国家半导体 - NSC 局域网晶体管
页数 文件大小 规格书
1页 103K
描述
TRANSISTOR 17 A, 80 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN, FET General Purpose Power

NDP508BL 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.68Is Samacsys:N
其他特性:LOGIC LEVEL COMPATIBLE配置:SINGLE
最小漏源击穿电压:80 V最大漏极电流 (ID):17 A
最大漏源导通电阻:0.1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL功耗环境最大值:60 W
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管元件材料:SILICONBase Number Matches:1

NDP508BL 数据手册

  
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