生命周期: | Active | Reach Compliance Code: | compliant |
风险等级: | 5.6 | 配置: | SINGLE |
FET 技术: | HIGH ELECTRON MOBILITY | 最大反馈电容 (Crss): | 0.04 pF |
最高频带: | KA BAND | 元件数量: | 1 |
工作模式: | DEPLETION MODE | 极性/信道类型: | N-CHANNEL |
最小功率增益 (Gp): | 11 dB | 认证状态: | Not Qualified |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MWT-H773-7 | IXYS |
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RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, | |
MWT-H773-8 | IXYS |
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RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, | |
MWT-H7-9 | IXYS |
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RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, | |
MWT-H9 | IXYS |
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RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, High Electron Mobil | |
MWT-H970 | IXYS |
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RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, High Electron Mobil | |
MWT-H971 | IXYS |
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RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, High Electron Mobil | |
MWT-H973 | IXYS |
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RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, High Electron Mobil | |
MWT-LN300 | IXYS |
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Wide Band Low Power Amplifier, | |
MWT-LN600 | IXYS |
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Wide Band Medium Power Amplifier, | |
MWT-LP7 | IXYS |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, |