5秒后页面跳转
捷配首页

Datasheet > MWT-H9
MWT-H9 PDF预览

MWT-H9

更新时间： 2024-11-21 19:54:55
品牌 Logo 应用领域
IXYS 晶体管
页数 文件大小 规格书
2页 95K
描述
RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, High Electron Mobility FET, DIE-4

阅读下载

中文翻译

获取价格

MWT-H9 技术参数

生命周期：Active零件包装代码：DIE
包装说明：DIE-4针数：4
Reach Compliance Code：compliant风险等级：5.76
配置：SINGLEFET 技术：HIGH ELECTRON MOBILITY
最高频带：K BANDJESD-30 代码：R-XUUC-N4
元件数量：1端子数量：4
工作模式：DEPLETION MODE封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：UNCASED CHIP
认证状态：Not Qualified表面贴装：YES
端子形式：NO LEAD端子位置：UPPER
晶体管元件材料：GALLIUM ARSENIDEBase Number Matches：1

MWT-H9 数据手册

 浏览型号MWT-H9的Datasheet PDF文件第2页 
MwT-H9  
AlGaAs/InGaAs PHEMT  
DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM  
All Dimensions in Microns  
67  
75  
FEATURES  
• +27 dBm OUTPUT POWER AT 12 GHz  
• 10 dB SMALL SIGNAL GAIN AT 12 GHz  
• 0.3 MICRON REFRACTORY METAL/GOLD GATE  
• 750 MICRON GATE WIDTH  
292  
98  
97  
75  
97  
• CHOICE OF CHIP AND THREE PACKAGE TYPES  
419  
CHIP THICKNESS = 125  
DESCRIPTION  
The MwT-H9 is a AlGaAs/InGaAs PHEMT device whose nominal quarter-micron gate length and 750 micron gate width make it ideally  
suited to applications requiring high-gain in the 500 MHz to 26 GHz frequency range with a 0.5W power output while exhibiting low noise  
figure. The chip is produced using MwT’s reliable metal system and all devices are screened to insure reliability. All chips are passivated  
using MwT’s patented “Diamond-Like Carbon” process for increased durability, Designers can use MwT’s unique BIN selection feature to  
choose devices from narrow Idss ranges, insuring consistent circuit operation.  
DC SPECIFICATIONS AT Ta = 25°C  
RF SPECIFICATIONS AT Ta = 25°C  
SYMBOL  
PARAM. & CONDITIONS  
UNITS  
MIN  
TYP  
210  
MAX  
282  
SYMBOL  
PARAMETERS AND CONDITIONS  
FREQ  
UNITS  
MIN TYP  
Output Power at 1 dB Compression  
VDS= 6.0 V Idss= 0.8 IDS=170mA  
Saturated Drain Current  
Vds= 4.0 V VGS= 0.0 V  
Transconductance  
P1dB  
12 GHz  
dBm  
26.0 27.0  
IDSS  
mA  
126  
Small Signal Gain  
VDS= 6.0 V Idss= 0.8 IDS=170mA  
Gm  
mS  
V
120  
160  
SSG  
PAE  
12 GHz  
12 GHz  
dB  
%
9.0  
35  
10.0  
45  
Vds= 2.0 V VGS= 0.0 V  
Pinch-off Voltage  
-1.2  
-12.0  
Vp  
-3.0  
Power Added Efficiency  
VDS= 6.0 V Idss= 0.8 IDS=170mA  
Vds= 3.0 V IDS= 5.0 mA  
Gate-to-Source Breakdown Volt.  
Igs= -0.5 mA  
BVGSO  
V
-6.0  
-8.0  
Output Power at 1dB Compression  
VDS= 6.0 V Idss= 0.8 IDS=170mA  
Pmax  
Idss  
12 GHz  
dBm  
mA  
27.8  
Gate-to-Drain Breakdown Volt.  
Igd= -0.5 mA  
BVGDO  
Rth  
V
-12.0  
Recommended IDSS Range  
for Optimum P1dB  
162-  
258  
Thermal  
Resistance MwT-H970, H973  
70  
175*  
MwT-H9 Chip, H971  
°C/W  
*Overall Rth depends on case mounting.  
PARAMETER  
DEVICE EQUIVALENT CIRCUIT MODEL  
VALUE  
0.60 Ω  
Cgd  
Lg  
Rg  
Rd  
Ld  
Source Resistance  
Rs  
Source Inductance  
Ls  
0.04  
160.0  
0.08  
0.8  
nH  
Ω
pF  
Ω
Drain-Source Resistance  
Drain-Source Capacitance  
Drain Resistance  
Rds  
Cds  
Rd  
GATE  
DRAIN  
Cgs  
Ri  
Rds  
gm  
tau  
Cds  
Cpd  
Cpg  
Drain Pad Capacitance  
Drain Inductance  
Gate Bond Wire Inductance  
Gate Pad Capacitance  
Gate Resistance  
Gate-Source Capacitance  
Channel Resistance  
Gate-Drain Capacitance  
Transconductance  
Cpd  
Ld  
Lg  
Cpg  
Rg  
Cgs  
Ri  
Cgd  
gm  
tau  
0.10  
0.30  
0.10  
0.03  
0.50  
1.2  
pF  
nH  
nH  
pF  
Ω
pF  
Ω
pF  
mS  
psec  
Rs  
Ls  
3.0  
SOURCE  
0.08  
170.0  
3.0  
Transit Time  
ORDERING INFORMATION  
Chip  
MwT-H9  
NOTE:  
Package 70  
Package 71  
Package 73  
MwT-H970  
MwT-H971  
MwT-H973  
For Package information, please see supplimentary application note from our website at  
www.mwtinc.com. When placing order or inquiring, please specify BIN range, wafer no., if  
known, and screening level required.  
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208  
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.  
12

中文翻译

下载PDF

与MWT-H9相关器件

型号 品牌 获取价格 描述 数据表
MWT-H970 IXYS

获取价格

 		RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, High Electron Mobil
MWT-H971 IXYS

获取价格

 		RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, High Electron Mobil
MWT-H973 IXYS

获取价格

 		RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, High Electron Mobil
MWT-LN300 IXYS

获取价格

 		Wide Band Low Power Amplifier,
MWT-LN600 IXYS

获取价格

 		Wide Band Medium Power Amplifier,
MWT-LP7 IXYS

获取价格

 		RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel,
MWT-LP770 IXYS

获取价格

 		RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel,
MWT-LP773 IXYS

获取价格

 		RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel,
MWT-PH11 IXYS

获取价格

 		RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H
MWT-PH15 IXYS

获取价格

 		RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel,

与MWT-H9相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证