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MWT-H9 PDF预览

MWT-H9

更新时间： 2024-09-15 19:54:55
品牌 Logo 应用领域
IXYS 晶体管
页数 文件大小 规格书
2页 95K
描述
RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, High Electron Mobility FET, DIE-4

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MWT-H9 技术参数

生命周期：Active零件包装代码：DIE
包装说明：DIE-4针数：4
Reach Compliance Code：compliant风险等级：5.76
配置：SINGLEFET 技术：HIGH ELECTRON MOBILITY
最高频带：K BANDJESD-30 代码：R-XUUC-N4
元件数量：1端子数量：4
工作模式：DEPLETION MODE封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：UNCASED CHIP
认证状态：Not Qualified表面贴装：YES
端子形式：NO LEAD端子位置：UPPER
晶体管元件材料：GALLIUM ARSENIDEBase Number Matches：1

MWT-H9 数据手册

 浏览型号MWT-H9的Datasheet PDF文件第2页 
MwT-H9  
AlGaAs/InGaAs PHEMT  
DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM  
All Dimensions in Microns  
67  
75  
FEATURES  
• +27 dBm OUTPUT POWER AT 12 GHz  
• 10 dB SMALL SIGNAL GAIN AT 12 GHz  
• 0.3 MICRON REFRACTORY METAL/GOLD GATE  
• 750 MICRON GATE WIDTH  
292  
98  
97  
75  
97  
• CHOICE OF CHIP AND THREE PACKAGE TYPES  
419  
CHIP THICKNESS = 125  
DESCRIPTION  
The MwT-H9 is a AlGaAs/InGaAs PHEMT device whose nominal quarter-micron gate length and 750 micron gate width make it ideally  
suited to applications requiring high-gain in the 500 MHz to 26 GHz frequency range with a 0.5W power output while exhibiting low noise  
figure. The chip is produced using MwT’s reliable metal system and all devices are screened to insure reliability. All chips are passivated  
using MwT’s patented “Diamond-Like Carbon” process for increased durability, Designers can use MwT’s unique BIN selection feature to  
choose devices from narrow Idss ranges, insuring consistent circuit operation.  
DC SPECIFICATIONS AT Ta = 25°C  
RF SPECIFICATIONS AT Ta = 25°C  
SYMBOL  
PARAM. & CONDITIONS  
UNITS  
MIN  
TYP  
210  
MAX  
282  
SYMBOL  
PARAMETERS AND CONDITIONS  
FREQ  
UNITS  
MIN TYP  
Output Power at 1 dB Compression  
VDS= 6.0 V Idss= 0.8 IDS=170mA  
Saturated Drain Current  
Vds= 4.0 V VGS= 0.0 V  
Transconductance  
P1dB  
12 GHz  
dBm  
26.0 27.0  
IDSS  
mA  
126  
Small Signal Gain  
VDS= 6.0 V Idss= 0.8 IDS=170mA  
Gm  
mS  
V
120  
160  
SSG  
PAE  
12 GHz  
12 GHz  
dB  
%
9.0  
35  
10.0  
45  
Vds= 2.0 V VGS= 0.0 V  
Pinch-off Voltage  
-1.2  
-12.0  
Vp  
-3.0  
Power Added Efficiency  
VDS= 6.0 V Idss= 0.8 IDS=170mA  
Vds= 3.0 V IDS= 5.0 mA  
Gate-to-Source Breakdown Volt.  
Igs= -0.5 mA  
BVGSO  
V
-6.0  
-8.0  
Output Power at 1dB Compression  
VDS= 6.0 V Idss= 0.8 IDS=170mA  
Pmax  
Idss  
12 GHz  
dBm  
mA  
27.8  
Gate-to-Drain Breakdown Volt.  
Igd= -0.5 mA  
BVGDO  
Rth  
V
-12.0  
Recommended IDSS Range  
for Optimum P1dB  
162-  
258  
Thermal  
Resistance MwT-H970, H973  
70  
175*  
MwT-H9 Chip, H971  
°C/W  
*Overall Rth depends on case mounting.  
PARAMETER  
DEVICE EQUIVALENT CIRCUIT MODEL  
VALUE  
0.60 Ω  
Cgd  
Lg  
Rg  
Rd  
Ld  
Source Resistance  
Rs  
Source Inductance  
Ls  
0.04  
160.0  
0.08  
0.8  
nH  
Ω
pF  
Ω
Drain-Source Resistance  
Drain-Source Capacitance  
Drain Resistance  
Rds  
Cds  
Rd  
GATE  
DRAIN  
Cgs  
Ri  
Rds  
gm  
tau  
Cds  
Cpd  
Cpg  
Drain Pad Capacitance  
Drain Inductance  
Gate Bond Wire Inductance  
Gate Pad Capacitance  
Gate Resistance  
Gate-Source Capacitance  
Channel Resistance  
Gate-Drain Capacitance  
Transconductance  
Cpd  
Ld  
Lg  
Cpg  
Rg  
Cgs  
Ri  
Cgd  
gm  
tau  
0.10  
0.30  
0.10  
0.03  
0.50  
1.2  
pF  
nH  
nH  
pF  
Ω
pF  
Ω
pF  
mS  
psec  
Rs  
Ls  
3.0  
SOURCE  
0.08  
170.0  
3.0  
Transit Time  
ORDERING INFORMATION  
Chip  
MwT-H9  
NOTE:  
Package 70  
Package 71  
Package 73  
MwT-H970  
MwT-H971  
MwT-H973  
For Package information, please see supplimentary application note from our website at  
www.mwtinc.com. When placing order or inquiring, please specify BIN range, wafer no., if  
known, and screening level required.  
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208  
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.  
12

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