Datasheet > MWT-PH5

MWT-PH5

更新时间： 2024-09-15 20:02:59

品牌	Logo	应用领域
IXYS		晶体管
页数	文件大小	规格书
2页	45K
描述
RF Small Signal Field-Effect Transistor, 2-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET,

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技术参数
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MWT-PH5 技术参数

生命周期：	Active	包装说明：	UNCASED CHIP, R-XUUC-N6
Reach Compliance Code：	compliant	风险等级：	5.37
FET 技术：	HIGH ELECTRON MOBILITY	最高频带：	X BAND
JESD-30 代码：	R-XUUC-N6	元件数量：	2
端子数量：	6	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR	封装形式：	UNCASED CHIP
极性/信道类型：	N-CHANNEL	最小功率增益 (Gp)：	18 dB
认证状态：	Not Qualified	子类别：	FET RF Small Signal
表面贴装：	YES	端子形式：	NO LEAD
端子位置：	UPPER	晶体管元件材料：	GALLIUM ARSENIDE
Base Number Matches：	1

MWT-PH5 数据手册

MwT-PH5

28 GHz High Gain, Dual Gate AlGaAs/InGaAs PHEMT

May 2011

Features:

•

18.0 dB Small Signal Gain at 12 GHz

20.0 dBm Output Power at 12 GHz

2 x 0.3 x 300 Micron Refractory Metal/Gold Gate

Excellent for High Gain and Medium Power

Applications to 28 GHz

•

Ideal for Commercial, Military, Hi-Rel Space

Applications

Chip Dimensions: 406 x 241 microns

Chip Thickness: 100 microns

Description:

The MwT-PH5 is a dual gate AlGaAs/InGaAs PHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal

0.3 micron gate length and 300 micron gate width make it ideally suited for applications requiring high-gain and power up to 28

GHz frequency range. The device is equally effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications. The

chip is produced using MwT's reliable metal systems and all devices from each wafer are screened to insure reliability. All chips

are passivated using MwT's patented "Diamond-Like Carbon" process for increased durability.

• at Ta= 25 °C

Electrical Specifications:

SYMBOL

PARAMETERS & CONDITIONS

FREQ

UNITS

dBm

MIN

18.0

TYP

20.0

Output Power at 1dB Compression

Vds=7.0 V Ids=0.6xIDSS=48 mA

P1dB

12 GHz

Small Signal Gain

VDS=7.0 V Ids=0.6xIDSS=48 mA

SSG

PAE

NFopt

12 GHz

15.0

18.0

Power Added Efficiency at P1dB

VDS=7.0 V Ids=0.6xIDSS=48 mA

Optimum Noise Figure

Vds=3.0 V Ids=20 mA

2.0

Gain at optimum Noise Figure

Vds=3.0 V Ids=20 mA

12.0

Recommended IDSS Range

for Optimum P1dB

40-

120

IDSS

MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538

510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com

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