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MWT-S771 PDF预览

MWT-S771

更新时间： 2024-11-21 20:00:11
品牌 Logo 应用领域
IXYS 局域网放大器晶体管
页数 文件大小 规格书
2页 98K
描述
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED PACKAGE-2

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MWT-S771 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：FLANGE MOUNT, S-CDFM-F2
针数：2Reach Compliance Code：compliant
HTS代码：8541.21.00.95风险等级：5.78
其他特性：LOW NOISE配置：SINGLE
FET 技术：METAL SEMICONDUCTOR最大反馈电容 (Crss)：0.027 pF
最高频带：KU BANDJESD-30 代码：S-CDFM-F2
JESD-609代码：e4湿度敏感等级：1
元件数量：1端子数量：2
工作模式：DEPLETION MODE封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：SQUARE封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最小功率增益 (Gp)：10 dB认证状态：Not Qualified
表面贴装：YES端子面层：Gold (Au)
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：AMPLIFIER
晶体管元件材料：GALLIUM ARSENIDEBase Number Matches：1

MWT-S771 数据手册

 浏览型号MWT-S771的Datasheet PDF文件第2页 
MwT-S7  
18 GHz High Gain, Low Noise  
GaAs FET  
DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM  
CHIP THICKNESS = 125  
50  
All Dimensions in Microns  
50  
FEATURES  
• HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE  
• EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER  
APPLICATIONS  
• 0.3 MICRON REFRACTORY METAL/GOLD GATE  
• 250 MICRON GATE WIDTH  
70  
241  
100  
• CHOICE OF CHIP AND TWO PACKAGE TYPES  
50  
50  
50  
50  
356  
DESCRIPTION  
The MwT-S7 is a GaAs MESFET device whose nominal quarter-micron gate length and 250 micron gate width make it ideally suited to  
applications requiring high-gain in the 500 MHz to 18 GHz frequency range while exhibiting a low noise figure. The straight geometry of  
the MwT-S7 makes it equally effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications. Procesing which guarantees  
low phase noise makes the MwT-S7 particularly attractive for oscillator applications. The chip is produced using MwT’s reliable metal  
system and devices from each wafer are screened to insure reliability. All chips are passivated using MwT’s patented “Diamond-Like  
Carbon” process for increased durability, Designers can use MwT’s unique BIN selection feature to choose devices from narrow Idss  
ranges, insuring consistent circuit operation.  
DC SPECIFICATIONS AT Ta = 25°C  
RF SPECIFICATIONS AT Ta = 25°C  
SYMBOL  
PARAM. & CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
98  
SYMBOL  
PARAMETERS AND CONDITIONS  
FREQ  
UNITS  
MIN TYP  
Output Power at 1 dB Compression  
VDS= 4.5 V Idss= 0.6 IDS=30mA  
Saturated Drain Current  
Vds= 4.0 V VGS= 0.0 V  
Transconductance  
P1dB  
12 GHz  
dBm  
16.0  
IDSS  
mA  
26  
Small Signal Gain  
VDS= 4.5 V Idss= 0.6 IDS=30mA  
Gm  
mS  
V
45  
60  
SSG  
12 GHz  
12 GHz  
dB  
dB  
10.0 11.0  
1.5  
Vds= 2.0 V VGS= 0.0 V  
Pinch-off Voltage  
-1.5  
-7.0  
Vp  
-4.5  
Optimum Noise Figure  
VDS= 3.0V IDS= 10mA  
NFopt  
Vds= 3.0 V IDS= 5.0 mA  
Gate-to-Source Breakdown Volt.  
Igs= -1.0 mA  
BVGSO  
V
-4.0  
-5.0  
Gain at Optimum Noise Figure  
VDS= 3.0V IDS= 10mA  
GA  
12 GHz  
dB  
7.0  
8.0  
Gate-to-Drain Breakdown Volt.  
Igd= -1.0 mA  
BVGDO  
Rth  
V
-7.0  
Recommended IDSS Range  
for Optimum P1dB  
34-  
70  
IDSS  
mA  
Thermal  
Resistance MwT-S770, S773  
180  
380*  
MwT-S7 Chip,  
°C/W  
*Overall Rth depends on case mounting.  
PARAMETER  
DEVICE EQUIVALENT CIRCUIT MODEL  
VALUE  
2.6 Ω  
Cgd  
Lg  
Rg  
Rd  
Ld  
Source Resistance  
Rs  
Source Inductance  
Ls  
0.025  
173  
nH  
Ω
pF  
Ω
pF  
nH  
nH  
pF  
Ω
Drain-Source Resistance  
Drain-Source Capacitance  
Drain Resistance  
Drain Pad Capacitance  
Drain Inductance  
Gate Bond Wire Inductance  
Gate Pad Capacitance  
Gate Resistance  
Rds  
Cds  
Rd  
Cpd  
Ld  
Lg  
Cpg  
Rg  
GATE  
DRAIN  
Cgs  
Ri  
Rds  
0.07  
3.67  
0.027  
0.159  
0.13  
0.05  
0.2  
gm  
tau  
Cds  
Cpd  
Cpg  
Rs  
Ls  
Cgs  
Ri  
Cgd  
gm  
tau  
0.314  
6.9  
0.027  
69.0  
2.0  
pF  
Ω
pF  
mS  
psec  
Gate-Source Capacitance  
Channel Resistance  
Gate-Drain Capacitance  
Transconductance  
SOURCE  
Transit Time  
ORDERING INFORMATION  
Chip  
MwT-S7  
NOTE:  
Package 71  
Package 73  
MwT-S771  
MwT-S773  
For Package information, please see supplimentary application note from our website at  
www.mwtinc.com. When placing order or inquiring, please specify BIN range, wafer no., if  
known, and screening level required.  
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208  
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.  
12

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