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MWT-PH7

更新时间： 2024-11-21 19:36:07
品牌 Logo 应用领域
IXYS 放大器晶体管
页数 文件大小 规格书
3页 72K
描述
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, 0.356 X 0.241 MM, 0.10 MM HEIGHT, DIE-3

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MWT-PH7 技术参数

生命周期：Active零件包装代码：DIE
包装说明：UNCASED CHIP, R-XUUC-N3针数：3
Reach Compliance Code：compliant风险等级：5.73
外壳连接：SOURCE配置：SINGLE
FET 技术：HIGH ELECTRON MOBILITY最大反馈电容 (Crss)：0.03 pF
最高频带：KA BANDJESD-30 代码：R-XUUC-N3
元件数量：1端子数量：3
工作模式：DEPLETION MODE封装主体材料：UNSPECIFIED
封装形状：RECTANGULAR封装形式：UNCASED CHIP
极性/信道类型：N-CHANNEL最小功率增益 (Gp)：12 dB
认证状态：Not Qualified表面贴装：YES
端子形式：NO LEAD端子位置：UPPER
晶体管应用：AMPLIFIER晶体管元件材料：GALLIUM ARSENIDE
Base Number Matches：1

MWT-PH7 数据手册

 浏览型号MWT-PH7的Datasheet PDF文件第2页浏览型号MWT-PH7的Datasheet PDF文件第3页 
MwT-PH7  
28 GHz Medium Power AlGaAs/InGaAs PHEMT  
May 2011  
Features:  
•
•
•
•
•
+24.0 dBm Output Power at 12 GHz  
13.5 dB Small Signal Gain at 12 GHz  
60% PAE at 12 GHz  
0.3 x 250 Micron Refractory Metal/Gold Gate  
Excellent for High Power, Gain, and High Power  
Added Efficiency up to 28 GHz  
•
Ideal for Commercial, Military, Hi-Rel Space  
Applications  
Chip Dimensions: 356 x 241 microns  
Chip Thickness: 100 microns  
Description:  
The MwT-PH7 is a AlGaAs/InGaAs PHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.3 micron  
Gate length and 250 micron gate width make it ideally suited for applications requiring high-gain and medium power up to 28 GHz  
frequency range. The device is equally effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications. The chip is  
produced using MwT's reliable metal systems and all devices from each wafer are screened to insure reliability. All chips are  
passivated using MwT's patented "Diamond-Like Carbon" process for increased durability.  
• at Ta= 25 °C  
Electrical Specifications:  
SYMBOL  
PARAMETERS & CONDITIONS  
FREQ  
UNITS  
dBm  
MIN  
22.0  
TYP  
24.0  
Output Power at 1dB Compression  
Vds=6.0 V Ids=0.75xIDSS=60 mA  
P1dB  
12 GHz  
Small Signal Gain  
Vds=6.0 V Ids=0.75xIDSS=60 mA  
12 GHz  
18 GHz  
13.5  
10.0  
SSG  
dB  
12.0  
Power Added Efficiency at P1dB  
Vds=7.0 V Ids=0.75xIDSS=60 mA  
Recommended IDSS Range  
for Optimum P1dB  
PAE  
12 GHz  
%
60  
58-  
110  
IDSS  
mA  
• at Ta= 25 °C  
PARAMETERS & CONDITIONS  
DC Specifications:  
SYMBOL  
UNITS  
MIN  
TYP  
MAX  
122  
Saturated Drain Current  
Vds=3.0 V Vgs=0.0 V  
Transconductance  
Vds=2.5 V Vgs=0.0 V  
Pinch-off Voltage  
IDSS  
mA  
mS  
V
50  
50  
Gm  
80  
Vp  
-1.2  
-8.0  
-2.5  
Vds=3.0 V Ids=1.0 mA  
Gate-to-Source Breakdown Voltage  
Igs= -0.3 mA  
BVGSO  
V
-5.0  
Gate-to-Drain Breakdown Voltage  
Igd= -0.3 mA  
BVGDO  
Rth  
V
-10.0  
-13.0  
150  
Thermal  
MwT-PH7 Chip  
C/W  
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538  
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com  
Data contained herein is subject to change without notice. All rights reserved © 2011  
123

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