是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | DISK BUTTON, R-XRDB-F4 |
针数: | 73 | Reach Compliance Code: | compliant |
风险等级: | 5.73 | 外壳连接: | SOURCE |
配置: | SINGLE | FET 技术: | HIGH ELECTRON MOBILITY |
最大反馈电容 (Crss): | 0.03 pF | 最高频带: | KA BAND |
JESD-30 代码: | R-XRDB-F4 | JESD-609代码: | e4 |
湿度敏感等级: | 2 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | DEPLETION MODE |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | DISK BUTTON | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最小功率增益 (Gp): | 12 dB |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Gold (Au) | 端子形式: | FLAT |
端子位置: | RADIAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | GALLIUM ARSENIDE |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MWT-PH9 | IXYS |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Ele | |
MWT-S7 | IXYS |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, | |
MWT-S770LN | IXYS |
获取价格 |
Transistor | |
MWT-S770SN | IXYS |
获取价格 |
Transistor | |
MWT-S771 | IXYS |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, | |
MWT-S773 | IXYS |
获取价格 |
TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, FET RF Small Signal | |
MWT-S773SN | IXYS |
获取价格 |
Transistor | |
MWT-S7LN | IXYS |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, | |
MWT-S7SN | IXYS |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, | |
MX | CHERRY |
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Keymodule MX |