Datasheet > MWT-LN600

MWT-LN600

更新时间： 2024-11-21 21:05:07

品牌	Logo	应用领域
IXYS		射频微波
页数	文件大小	规格书
3页	85K
描述
Wide Band Medium Power Amplifier,

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MWT-LN600 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.72
其他特性：	LOW NOISE, HIGH RELIABILITY	构造：	MODULE
最大输入功率 (CW)：	16.99 dBm	射频/微波设备类型：	WIDE BAND MEDIUM POWER
Base Number Matches：	1

MWT-LN600 数据手册

MwT-LN600

26 GHz Super Low Noise pHEMT Device

May 2010

FEATURES

APPLICATIONS

ꢀ

0.50 dB Minimum Noise Figure at 12 GHz ꢀ Excellent Choice for Super Low Noise Applications

8.0 dB Associated Gain at 12 GHz

20.0 dBm P1dB at 12 GHz

ꢀ

Ideal for Commercial, Military, Hi-Rel Space Applications

0.15 Micron x 600 Micron Gate

DESCRIPTION

The MwT- LN600 is a super low noise, quasi enhancement-mode pHEMT whose nominal 0.15 micron gate length and

600 micron gate width make it ideally suited for applications requiring very low noise and high associated gain up to 20

GHz. The device is equally effective for wideband (e.g. 6 to 18 GHz) and narrow-band applications. Each wafer can be

screened to meet quality and reliability requirements of space and military applications.

RF SPECIFICATIONS AT Ta = 25 C

SYMBOL

PARAMETERS & CONDITIONS

Minimum Noise Figure

Vds=2.5V Ids = 40 mA (Vgs=0)

Associated Gain

Vds=2.5V Ids = 40 mA (Vgs=0)

Output Power at 1dB Compression

Vds=3.0V Ids = 100 mA

FREQ

4 GHz

12 GHz

4 GHz

12 GHz

UNITS

MIN

TYP

0.2

0.5

12.0

9.0

MAX

NF min

11.0

8.0

SSG

P1dB

12 GHz

dBm

20.0

Note: MWT-LN600 is a quasi enhancement mode device. For best noise figure, Vgs bias voltage should be set at

either 0 or slightly positive voltages to achieve the target operating current.

DC SPECIFICATIONS AT Ta = 25 C

SYMBOL

PARAMETERS & CONDITIONS

Maximum Current

FREQ

UNITS

MIN

TYP

MAX

150

175

250

Imax

Vds = 2.5V Vgs = 0.6V

Transconductance

300

400

-0.2

-8.0

-9.0

Vds = 2.5V Vgs = 0.2V

Pinch-off Voltage

Vds = 2.0V Ids = 1.0mA

Gate-to-Source Breakdown Voltage

Igs = -0.6mA

-6.0

-7.5

BVGSO

BVGDO

Rth *

Gate-to-Drain Breakdown Voltage

Igd = -0.6mA

Chip Thermal Resistance

ºC/W

* Overall Rth depends on chip mounting

4268 Solar Way

Fremont, CA 94538

sales@mwtinc.com

P (510) 651-6700

F (510) 952-4000

www.mwtinc.com

12 3

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