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MWT-PH4 PDF预览

MWT-PH4

更新时间： 2024-11-21 21:10:19
品牌 Logo 应用领域
IXYS 放大器晶体管
页数 文件大小 规格书
2页 43K
描述
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, High Electron Mobility FET,

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MWT-PH4 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：UNCASED CHIP, R-XUUC-N4Reach Compliance Code：compliant
风险等级：5.78外壳连接：ISOLATED
最小漏源击穿电压：6.5 VFET 技术：HIGH ELECTRON MOBILITY
最高频带：KA BANDJESD-30 代码：R-XUUC-N4
元件数量：1端子数量：4
工作模式：DEPLETION MODE最高工作温度：175 °C
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：UNCASED CHIP极性/信道类型：N-CHANNEL
功耗环境最大值：0.72 W最小功率增益 (Gp)：10 dB
子类别：FET RF Small Signal表面贴装：YES
端子形式：NO LEAD端子位置：UPPER
晶体管应用：AMPLIFIER晶体管元件材料：GALLIUM ARSENIDE
Base Number Matches：1

MWT-PH4 数据手册

 浏览型号MWT-PH4的Datasheet PDF文件第2页 
MwT-PH4  
28 GHz Medium Power AlGaAs/InGaAs PHEMT  
Preliminary Data Sheet  
June 2011  
50  
Features:  
•
•
•
•
11.5 dB Small Signal Gain at 12 GHz  
20.5 dBm Output Power at 12 GHz  
0.3 x 180 Micron Refractory Metal/Gold Gate  
Excellent for Medium Power Applications up to 28  
78  
241  
GHz  
90  
•
Ideal for Commercial, Military, Hi-Rel Space  
Applications  
84  
50  
84  
356  
Chip Dimensions: 356 x 241 microns  
Chip Thickness: 125 microns  
Description:  
The MwT-PH4 is a AlGaAs/InGaAs PHEMT (Pseudomorphic-High-Electron-Mobility-Transistor) device whose nominal 0.3 micron  
gate length and 180 micron gate width make it ideally suited for applications requiring power up to 28 GHz frequency range. The  
device is equally effective for either wideband (e.g. 6 to 18 GHz) or narrow-band applications. The chip is produced using MwT's  
reliable metal systems and all devices from each wafer are screened to insure reliability. All chips are passivated using MwT's  
patented "Diamond-Like Carbon" process for increased durability.  
• at Ta= 25 °C  
Electrical Specifications:  
SYMBOL  
PARAMETERS & CONDITIONS  
FREQ  
UNITS  
dBm  
MIN  
20  
TYP  
20.5  
Output Power at 1dB Compression  
Vds=7.0 V Ids=0.6xIDSS=48 mA  
P1dB  
12 GHz  
Small Signal Gain  
VDS=6.0 V Ids=0.6 x IDSS=48 mA  
SSG  
PAE  
NFopt  
GA  
12 GHz  
12 GHz  
12 GHz  
12 GHz  
dB  
%
10  
11.5  
50  
Power Added Efficiency at P1dB  
VDS=7.0 V Ids=0.6xIDSS=50 mA  
Optimum Noise Figure  
Vds=2.8 V Ids=11 mA  
dB  
dB  
mA  
2.5  
7
Gain at Optimum Noise Figure  
Vds=3.0 V Ids=20 mA  
Recommended IDSS Range  
for Optimum P1dB  
25-  
66  
IDSS  
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538  
510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com  
Data contained herein is subject to change without notice. All rights reserved © 2011  
12

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