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MWT-LP773 PDF预览

MWT-LP773

更新时间: 2024-11-01 19:58:03
品牌 Logo 应用领域
IXYS 放大器晶体管
页数 文件大小 规格书
2页 418K
描述
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET,

MWT-LP773 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:MICROWAVE, X-CXMW-F4
Reach Compliance Code:compliant风险等级:5.78
其他特性:LOW NOISE配置:SINGLE
FET 技术:METAL SEMICONDUCTOR最大反馈电容 (Crss):0.03 pF
最高频带:KA BANDJESD-30 代码:X-CXMW-F4
JESD-609代码:e4湿度敏感等级:2
元件数量:1端子数量:4
工作模式:DEPLETION MODE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:UNSPECIFIED封装形式:MICROWAVE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最小功率增益 (Gp):10 dB认证状态:Not Qualified
表面贴装:YES端子面层:Gold (Au)
端子形式:FLAT端子位置:UNSPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:GALLIUM ARSENIDEBase Number Matches:1

MWT-LP773 数据手册

 浏览型号MWT-LP773的Datasheet PDF文件第2页 

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