是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | MICROWAVE, X-CXMW-F4 |
Reach Compliance Code: | compliant | 风险等级: | 5.78 |
其他特性: | LOW NOISE | 配置: | SINGLE |
FET 技术: | METAL SEMICONDUCTOR | 最大反馈电容 (Crss): | 0.03 pF |
最高频带: | KA BAND | JESD-30 代码: | X-CXMW-F4 |
JESD-609代码: | e4 | 湿度敏感等级: | 2 |
元件数量: | 1 | 端子数量: | 4 |
工作模式: | DEPLETION MODE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | UNSPECIFIED | 封装形式: | MICROWAVE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最小功率增益 (Gp): | 10 dB | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Gold (Au) |
端子形式: | FLAT | 端子位置: | UNSPECIFIED |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | GALLIUM ARSENIDE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MWT-PH11 | IXYS |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, H | |
MWT-PH15 | IXYS |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, | |
MWT-PH15QACSB | IXYS |
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RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Ele | |
MWT-PH16A | IXYS |
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RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Ele | |
MWT-PH4 | IXYS |
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RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, | |
MWT-PH5 | IXYS |
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RF Small Signal Field-Effect Transistor, 2-Element, X Band, Gallium Arsenide, N-Channel, H | |
MWT-PH7 | IXYS |
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RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, | |
MWT-PH770 | IXYS |
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RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, | |
MWT-PH773 | IXYS |
获取价格 |
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, | |
MWT-PH9 | IXYS |
获取价格 |
RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Ele |