Datasheet > MWT-LN300

MWT-LN300

更新时间： 2024-11-01 19:56:39

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
3页	92K
描述
Wide Band Low Power Amplifier,

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技术参数
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MWT-LN300 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.72
其他特性：	LOW NOISE, HIGH RELIABILITY	构造：	MODULE
最大输入功率 (CW)：	16.02 dBm	射频/微波设备类型：	WIDE BAND LOW POWER
Base Number Matches：	1

MWT-LN300 数据手册

MwT-LN300

26 GHz Super Low Noise pHEMT Device

May 2010

FEATURES

APPLICATIONS

ꢀ

0.6 dB Minimum Noise Figure at 12 GHz ꢀ Excellent Choice for Super Low Noise Applications

10.0 dB Associated Gain at 12 GHz

15.0 dBm P1dB at 12 GHz

ꢀ

Ideal for Commercial, Military, Hi-Rel Space Applications

0.15 Micron x 300 Micron Gate

DESCRIPTION

The MwT-LN300 is a super low noise, quasi-enhancement-mode pHEMT whose nominal 0.15 micron gate length and

300 micron gate width makes it ideally suited for applications requiring very low noise and high associated gain up to 30

GHz. The device is equally effective for wideband (e.g. 6 to 18 GHz) and narrow-band applications. Each wafer can be

screened to meet the high quality and reliability requirements for space and military applications.

RF SPECIFICATIONS AT Ta = 25 C

SYMBOL

PARAMETERS & CONDITIONS

Minimum Noise Figure

Vds=2.5V Ids = 25 mA (Vgs=0)

Associated Gain

Vds=2.5V Ids = 25 mA (Vgs=0)

Output Power at 1dB Compression

Vds=3.0V Ids = 50 mA

FREQ

4 GHz

12 GHz

4 GHz

12 GHz

UNITS

MIN

TYP

0.2

0.6

13.0

10.0

MAX

NF min

SSG

P1dB

12 GHz

dBm

16.0

Note: MWT-LN300 is a quasi enhancement mode device. For best noise figure, Vgs bias voltage should be set at

either 0 or slightly positive voltages to achieve the target operating current.

DC SPECIFICATIONS AT Ta = 25 C

SYMBOL

PARAMETERS & CONDITIONS

Saturated Drain Current

Vds = 2.5V Vgs = 0.6V

Transconductance

FREQ

UNITS

MIN

TYP

MAX

120

Imax

160

200

-0.2

-8.0

-9.0

180

Vds = 2.5V Vgs = 0.2V

Pinch-off Voltage

Vds = 2.0V Ids = 0.5mA

Gate-to-Source Breakdown Voltage

Igs = -0.3mA

-6.0

-7.5

BVGSO

BVGDO

Rth *

Gate-to-Drain Breakdown Voltage

Igd = -0.3mA

Chip Thermal Resistance

ºC/W

* Overall Rth depends on chip mounting

4268 Solar Way

Fremont, CA 94538

sales@mwtinc.com

P (510) 651-6700

F (510) 952-4000

www.mwtinc.com

12 3

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