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MWT-H7-9 PDF预览

MWT-H7-9

更新时间： 2024-11-22 04:56:27
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
2页 130K
描述
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE-6

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MWT-H7-9 数据手册

 浏览型号MWT-H7-9的Datasheet PDF文件第2页 
MwT-H7  
28 GHz Medium Power/ High Gain  
AlGaAs/InGaAs PHEMT  
DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM  
All Dimensions in Microns  
FEATURES  
50  
50  
• 21.5 dBm POWER OUTPUT AT 12 GHz  
• EXCELLENT FOR HIGH GAIN AND MEDIUM POWER  
APPLICATIONS  
70  
241  
100  
• 0.3 MICRON REFRACTORY METAL/GOLD GATE  
• 250 MICRON GATE WIDTH  
• CHOICE OF CHIP AND TWO PACKAGE TYPES  
50  
50 50  
50  
356  
CHIP THICKNESS = 125 MICRONS  
DESCRIPTION  
The MwT-H7 is an AlGaAs/InGaAs heterojunction PHEMT (Pseudomorphic-High-Electron-Mobility Transistor) device whose nominal 0.3  
micron gate length and 250 micron gate width make it ideally suited to applications requiring high-gain and medium power in the 500  
MHz to 28 GHz frequency range. The device is equally effective for either wideband (e.g. 6-18 GHz) or narrow-band applications. The  
chip is produced using MwT’s reliable metal system and all devices are screened to insure reliability. All chips are passivated using MwT’s  
patented “Diamond-Like Carbon” process for increased durability.  
DC SPECIFICATIONS AT Ta = 25°C  
RF SPECIFICATIONS AT Ta = 25°C  
SYMBOL  
PARAM. & CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
SYMBOL  
PARAMETERS AND CONDITIONS  
FREQ  
UNITS  
MIN TYP  
Output Power at 1 dB Compression  
VDS= 5.0 V Idss= 50mA IDS=0.8  
12 GHz  
dBm  
21.5  
Saturated Drain Current  
Vds= 3.0 V VGS= 0.0 V  
Transconductance  
20.0  
P1dB  
IDSS  
mA  
34  
106  
Small Signal Gain  
VDS= 5.0 V Idss= 50mA IDS=0.8  
Gm  
mS  
V
50  
75  
SSG  
11.0  
12.0  
2.0  
dB  
dB  
12 GHz  
12 GHz  
Vds= 3.0 V VGS= 0.0 V  
Pinch-off Voltage  
Optimum Noise Figure  
VDS= 3.0 V IDS= 10mA  
-1.5  
-8.0  
Vp  
-5.0  
NFopt  
Vds= 3.0 V IDS= 1.0 mA  
Gate-to-Source Breakdown Volt.  
Igs= -0.4mA, Igd= 0  
Gain at Optimum Noise Figure  
VDS= 3.0 V IDS= 10mA  
BVGSO  
V
-5.0  
-6.0  
GA  
12 GHz  
%
10.0  
Gate-to-Drain Breakdown Volt.  
Igd= -0.4 mA, Igs= 0  
BVGDO  
Rth  
V
Recommended IDSS Range  
for Optimum P1dB  
-8.0  
50-  
86  
Idss  
mA  
Thermal  
Resistance MwT -H770, H773  
180-  
380  
MwT-H7 Chip  
°C/W  
PARAMETER  
DEVICE EQUIVALENT CIRCUIT MODEL  
VALUE  
2.6 Ω  
Source Resistance  
Rs  
Source Inductance  
Ls  
0.025  
nH  
Ω
pF  
Ω
pF  
nH  
nH  
pF  
Ω
pF  
Ω
pF  
mS  
psec  
Cgd  
Lg  
Rg  
Rd  
Ld  
Drain-Source Resistance  
Drain-Source Capacitance  
Drain Resistance  
Drain Pad Capacitance  
Drain Inductance  
Gate Bond Wire Inductance  
Gate Pad Capacitance  
Gate Resistance  
Gate-Source Capacitance  
Channel Resistance  
Gate-Drain Capacitance  
Transconductance  
Rds  
Cds  
Rd  
Cpd  
Ld  
Lg  
Cpg  
Rg  
Cgs  
Ri  
Cgd  
gm  
tau  
400.0  
0.070  
3.67  
0.027  
0.159  
0.089  
0.050  
0.20  
0.4  
DRAIN  
Cgs  
Ri  
GATE  
Rds  
gm  
tau  
Cds  
Cpd  
Cpg  
Rs  
Ls  
6.9  
0.04  
85.0  
3.02  
SOURCE  
Transit Time  
ORDERING INFORMATION  
Chip  
MwT-H7  
NOTE:  
Package 70  
Package 73  
MwT-H770  
MwT-H773  
For Package information, please see the Fapp0002 note from our website at www.mwtinc.com.  
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening  
level required.  
4268 Solar Way Fremont California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208  
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.  
12

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