Datasheet > MT3S07T_07

MT3S07T_07

更新时间： 2024-11-29 04:14:19

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器
页数	文件大小	规格书
5页	462K
描述
VHF~UHF Band Low Noise Amplifier Applications

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中文翻译

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数据手册

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MT3S07T_07 数据手册

MT3S07T

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type

MT3S07T

VHF~UHF Band Low Noise Amplifier Applications

Unit: mm

•

Low noise figure: NF = 1.5dB (V

= 3 V, I = 5 mA, f = 2 GHz)

CE C

High gain: |S |²= 9.5dB (V

= 3 V, I = 15 mA, f = 2 GHz)

21e

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

1.5

°C

Base current

Collector power dissipation

Junction temperature

Storage temperature range

100

125

−55~125

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

JEDEC

JEITA

―

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

TOSHIBA

2-1B1A

Weight: 0.0022 g (typ.)

Marking

2007-11-01

12 3 4 5

中文翻译

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