Datasheet > MRF6S21060NR1_08

MRF6S21060NR1_08

更新时间： 2024-01-11 17:18:16

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
20页	870K
描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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中文翻译

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数据手册

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MRF6S21060NR1_08 数据手册

TYPICAL CHARACTERISTICS

-1 0

= 28 Vdc, P = 60 W (PEP), I = 610 mA

out DQ

Two-Tone Measurements

Ideal

(f1 + f2)/2 = Center Frequency of 2140 MHz

-2 0

-3 0

-4 0

P3dB = 49.986 dBm (99.68 W)

P1dB = 49.252 dBm (84.18 W)

3rd Order

Actual

5th Order

7th Order

= 28 Vdc, I = 610 mA

-5 0

-60

Pulsed CW, 8 μsec(on), 1 msec(off)

f = 2140 MHz

0.1

100

TWO-T ONE SPACING (MHz)

P , INPUT POWER (dBm)

Figure 7. Intermodulation Distortion Products

versus Tone Spacing

Figure 8. Pulsed CW Output Power versus

Input Power

= 28 Vdc, I = 610 mA

= -30_C

25_C

85_C

25_C

f1 = 2135 MHz, f2 = 2145 MHz

2-Carrier W-CDMA, 10 MHz Carrier

Spacing, 3.84 MHz Channel

Bandwidth, PAR = 8.5 dB @ 0.01%

Probability (CCDF)

-10

-20

-30

IM3

-30 _C

ACPR

-40

-50

-60

-30 _C

25_C

85_C

, OUTPUT POWER (WATTS) AVG.

100 200

out

Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain

and Drain Efficiency versus Output Power

= 610 mA

f = 2140 MHz

= -30_C

25_C

-30 _C

25_C

85_C

= 28 Vdc

= 610 mA

f = 2140 MHz

32 V

28 V

= 24 V

100

120

, OUTPUT POWER (WATTS) CW

100 200

out

, OUTPUT POWER (WATTS) CW

Figure 10. Power Gain and Drain Efficiency

versus CW Output Power

Figure 11. Power Gain versus Output Power

MRF6S21060NR1 MRF6S21060NBR1

RF Device Data

Freescale Semiconductor

1...3 4 567 8 9...20

中文翻译

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