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MRF6S21060NR1_08 PDF预览

MRF6S21060NR1_08

更新时间: 2024-02-09 13:26:14
品牌 Logo 应用领域
飞思卡尔 - FREESCALE 晶体晶体管功率场效应晶体管射频
页数 文件大小 规格书
20页 870K
描述
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

MRF6S21060NR1_08 数据手册

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TYPICAL CHARACTERISTICS  
-1 0  
57  
55  
V
= 28 Vdc, P = 60 W (PEP), I = 610 mA  
out DQ  
Two-Tone Measurements  
DD  
Ideal  
(f1 + f2)/2 = Center Frequency of 2140 MHz  
-2 0  
-3 0  
-4 0  
P3dB = 49.986 dBm (99.68 W)  
P1dB = 49.252 dBm (84.18 W)  
53  
51  
49  
47  
3rd Order  
Actual  
5th Order  
7th Order  
V
DD  
= 28 Vdc, I = 610 mA  
DQ  
-5 0  
-60  
Pulsed CW, 8 μsec(on), 1 msec(off)  
f = 2140 MHz  
45  
43  
0.1  
1
10  
100  
28  
30  
32  
34  
36  
38  
40  
TWO-T ONE SPACING (MHz)  
P , INPUT POWER (dBm)  
in  
Figure 7. Intermodulation Distortion Products  
versus Tone Spacing  
Figure 8. Pulsed CW Output Power versus  
Input Power  
60  
0
V
= 28 Vdc, I = 610 mA  
DQ  
DD  
T
= -30_C  
25_C  
85_C  
25_C  
C
f1 = 2135 MHz, f2 = 2145 MHz  
2-Carrier W-CDMA, 10 MHz Carrier  
Spacing, 3.84 MHz Channel  
Bandwidth, PAR = 8.5 dB @ 0.01%  
Probability (CCDF)  
50  
40  
30  
20  
-10  
-20  
-30  
η
D
IM3  
-30 _C  
ACPR  
G
-40  
-50  
-60  
ps  
-30 _C  
25_C  
85_C  
10  
0
1
10  
, OUTPUT POWER (WATTS) AVG.  
100 200  
P
out  
Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain  
and Drain Efficiency versus Output Power  
16  
17  
16  
15  
70  
60  
50  
40  
I
= 610 mA  
f = 2140 MHz  
G
T
= -30_C  
25_C  
DQ  
ps  
C
-30 _C  
15  
14  
13  
12  
25_C  
85_C  
85_C  
14  
13  
12  
η
D
30  
20  
V
= 28 Vdc  
= 610 mA  
DD  
I
DQ  
f = 2140 MHz  
32 V  
28 V  
V
DD  
= 24 V  
11  
10  
10  
0
11  
10  
0
20  
40  
60  
80  
100  
120  
1
10  
, OUTPUT POWER (WATTS) CW  
100 200  
P
out  
P
out  
, OUTPUT POWER (WATTS) CW  
Figure 10. Power Gain and Drain Efficiency  
versus CW Output Power  
Figure 11. Power Gain versus Output Power  
MRF6S21060NR1 MRF6S21060NBR1  
RF Device Data  
Freescale Semiconductor  
6

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