Datasheet > MRF5811LT1

MRF5811LT1

更新时间： 2024-02-19 08:12:58

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		/
页数	文件大小	规格书
8页	159K
描述
LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON

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中文翻译

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数据手册

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MRF5811LT1 数据手册

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by MRF5811LT1/D

SEMICONDUCTOR TECHNICAL DATA

The RF Line

Designed for high current, low power amplifiers up to 1.0 GHz.

= 200 mA

LOW NOISE

HIGH–FREQUENCY

TRANSISTOR

•

Low Noise (2.0 dB @ 500 MHz)

Low Intermodulation Distortion

High Gain

State–of–the–Art Technology

Fine Line Geometry

NPN SILICON

Arsenic Emitters

Gold Top Metallization

Nichrome Thin–Film Ballasting Resistors

•

Excellent Dynamic Range

Fully Characterized

High Current–Gain Bandwidth Product

Available in Tape and Reel by Adding T1 Suffix to Part Number.

T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel.

CASE 318A–05, STYLE 1

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

Collector–Base Voltage

CEO

CBO

EBO

Vdc

Emitter–Base Voltage

2.5

Vdc

Collector Current — Continuous

Thermal Resistance θJC (1)

200

106

mAdc

°C/W

θJC

Total Device Dissipation @ T = 75°C

0.71

9.4

Watts

mW/°C

Derate above T = 75°C

Storage Junction Temperature Range

Maximum Junction Temperature

– 55 to +150

150

°C

stg

Jmax

DEVICE MARKING

MRF5811L = 20

NOTES:

1. Case temperature measured on collector lead immediately adjacent to body of package.

REV 1

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1995

MRF5811LT1

12 3 4 5 6 7 8

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