生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.7 | 其他特性: | LOW NOISE |
最大集电极电流 (IC): | 0.2 A | 基于收集器的最大容量: | 2 pF |
集电极-发射极最大电压: | 15 V | 配置: | SINGLE |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 1 | 端子数量: | 8 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 5000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MRF5812G | ADPOW |
获取价格 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
MRF5812MR1 | NJSEMI |
获取价格 |
Trans GP BJT NPN 15V 0.2A 8-Pin SOIC | |
MRF5812R1 | MICROSEMI |
获取价格 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
MRF5812R1G | MICROSEMI |
获取价格 |
Transistor | |
MRF5812R2 | MICROSEMI |
获取价格 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
MRF5812R2G | MICROSEMI |
获取价格 |
Transistor | |
MRF581A | ADPOW |
获取价格 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
MRF581A | MICROSEMI |
获取价格 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
MRF581A | NJSEMI |
获取价格 |
Trans GP BJT NPN 15V 0.2A 4-Pin Macro-X | |
MRF581AG | NJSEMI |
获取价格 |
Trans GP BJT NPN 15V 0.2A 4-Pin Macro-X |