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MRF5812 PDF预览

MRF5812

更新时间: 2024-09-27 04:14:39
品牌 Logo 应用领域
ADPOW 晶体晶体管射频微波光电二极管放大器
页数 文件大小 规格书
5页 125K
描述
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MRF5812 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.7其他特性:LOW NOISE
最大集电极电流 (IC):0.2 A基于收集器的最大容量:2 pF
集电极-发射极最大电压:15 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):5000 MHzBase Number Matches:1

MRF5812 数据手册

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MRF5812, R1, R2  
MRF5812G, R1, R2  
* G Denotes RoHS Compliant, Pb free Terminal Finish  
Features  
·
·
·
·
Low Noise - 2.5 dB @ 500 MHZ  
Associated Gain = 15.5 dB @ 500 MHz  
Ftau - 5.0 GHz @ 10v, 75mA  
Cost Effective SO-8 package  
SO-8  
R1 suffix–Tape and Reel, 500 units  
R2 suffix–Tape and Reel, 2500 units  
DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz.  
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
Value  
15  
Unit  
Vdc  
Vdc  
Vdc  
mA  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
30  
2.5  
200  
Thermal Data  
P
D
Total Device Dissipation @ TC = 25ºC  
Derate above 25ºC  
1.25  
10  
Watts  
mW/ ºC  
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein  
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.  
Rev A 9/2005  

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