5秒后页面跳转
MRF587 PDF预览

MRF587

更新时间: 2024-09-28 05:50:11
品牌 Logo 应用领域
泰科 - TE 晶体晶体管射频放大器
页数 文件大小 规格书
12页 336K
描述
The RF Line NPN Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz

MRF587 技术参数

是否Rohs认证: 符合生命周期:Transferred
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.06
Is Samacsys:N其他特性:LOW NOISE
最大集电极电流 (IC):0.2 A基于收集器的最大容量:2.2 pF
集电极-发射极最大电压:17 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:O-CRPM-F4
元件数量:1端子数量:4
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:POST/STUD MOUNT极性/信道类型:NPN
认证状态:Not Qualified表面贴装:NO
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):5500 MHzBase Number Matches:1

MRF587 数据手册

 浏览型号MRF587的Datasheet PDF文件第2页浏览型号MRF587的Datasheet PDF文件第3页浏览型号MRF587的Datasheet PDF文件第4页浏览型号MRF587的Datasheet PDF文件第5页浏览型号MRF587的Datasheet PDF文件第6页浏览型号MRF587的Datasheet PDF文件第7页 
MRF587  
The RF Line NPN Silicon High Frequency Transistor  
Noise Figure 3.0 dB@ 500MHz  
M/A-COM Products  
Released - Rev. 07.07  
Designed for use in high–gain, low–noise, ultra–linear, tuned and wide-  
band amplifiers. Ideal for use in CATV, MATV, and instrumentation  
applications.  
Product Image  
Low noise figure —  
NF = 3.0 dB (typ.) @ f = 500 MHz, IC = 90 mA  
High power gain —  
GU(max) = 16.5 dB (typ.) @ f = 500 MHz  
Ion implanted  
All gold metal system  
High fT — 5.5 GHz  
Low intermodulation distortion:  
TB3 = –70 dB  
CASE 244A–01, STYLE 1  
DIN = 125 dB μV  
Nichrome emitter ballast resistors  
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  

与MRF587相关器件

型号 品牌 获取价格 描述 数据表
MRF5943 MICROSEMI

获取价格

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF5943 MOTOROLA

获取价格

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MRF5943C MICROSEMI

获取价格

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF5943C ASI

获取价格

NPN SILICON HIGH FREQUENCY TRANSISTOR
MRF5943C ADPOW

获取价格

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF5943G MICROSEMI

获取价格

Transistor
MRF5943R1 MOTOROLA

获取价格

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MRF5943R1 MICROSEMI

获取价格

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
MRF5943R1G MICROSEMI

获取价格

Transistor
MRF5943R2 MICROSEMI

获取价格

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS