Datasheet > MRF587

MRF587

更新时间： 2023-12-06 20:10:53

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MACOM		/
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Bipolar

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MRF587 数据手册

MRF587

The RF Line NPN Silicon High Frequency Transistor

Noise Figure 3.0 dB@ 500MHz

Rev. V1

Designed for use in high–gain, low–noise, ultra–linear, tuned and wide-

band amplifiers. Ideal for use in CATV, MATV, and instrumentation

applications.

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

Low noise figure —

NF = 3.0 dB (typ.) @ f = 500 MHz, IC = 90 mA

High power gain —

GU(max) = 16.5 dB (typ.) @ f = 500 MHz



Ion implanted

All gold metal system

High fT — 5.5 GHz

Low intermodulation distortion:

TB3 = –70 dB

CASE 244A–01, STYLE 1

DIN = 125 dB V



Nichrome emitter ballast resistors

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

For further information and support please visit:

https://www.macom.com/support

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MRF587 替代型号

型号	品牌	替代类型	描述	数据表
BFG35,115	NXP	功能相似	BFG35 - NPN 4 GHz wideband transistor SC-73 4-Pin
BFQ18A,115	NXP	功能相似	BFQ18A - NPN 4 GHz wideband transistor SOT-89 3-Pin
MRF586	MICROSEMI	功能相似	RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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