生命周期: | Transferred | 包装说明: | POST/STUD MOUNT, O-CRPM-F4 |
针数: | 4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.44 |
其他特性: | LOW NOISE | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 0.2 A | 基于收集器的最大容量: | 2.2 pF |
集电极-发射极最大电压: | 17 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 50 | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | O-CRPM-F4 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 200 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 极性/信道类型: | NPN |
功耗环境最大值: | 5 W | 最大功率耗散 (Abs): | 5 W |
最小功率增益 (Gp): | 11 dB | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | FLAT | 端子位置: | RADIAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 5500 MHz |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
MRF587 | MACOM |
功能相似 |
Bipolar | |
2SC3357 | RENESAS |
功能相似 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MRF5943 | MICROSEMI |
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RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
MRF5943 | MOTOROLA |
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UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR | |
MRF5943C | MICROSEMI |
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RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
MRF5943C | ASI |
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NPN SILICON HIGH FREQUENCY TRANSISTOR | |
MRF5943C | ADPOW |
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RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
MRF5943G | MICROSEMI |
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Transistor | |
MRF5943R1 | MOTOROLA |
获取价格 |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR | |
MRF5943R1 | MICROSEMI |
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RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | |
MRF5943R1G | MICROSEMI |
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Transistor | |
MRF5943R2 | MICROSEMI |
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RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |