Datasheet > MRF421

MRF421

更新时间： 2024-11-17 22:24:11

品牌	Logo	应用领域
泰科 - TE		晶体晶体管射频放大器局域网
页数	文件大小	规格书
4页	135K
描述
The RF Line NPN Silicon RF Power Transistor

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中文翻译

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技术参数
数据手册

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MRF421 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	针数：	4
Reach Compliance Code：	unknown	风险等级：	5.05
最大集电极电流 (IC)：	20 A	配置：	Single
最小直流电流增益 (hFE)：	10	最高工作温度：	150 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	290 W
子类别：	Other Transistors	Base Number Matches：	1

MRF421 数据手册

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SEMICONDUCTOR TECHNICAL DATA

by MRF421/D

The RF Line

NP N S ilic on

Designed primarily for application as a high–power linear amplifier from 2.0 to

30 MHz.

•

Specified 12.5 Volt, 30 MHz Characteristics —

Output Power = 100 W (PEP)

Minimum Gain = 10 dB

100 W (PEP), 30 MHz

RF POWER

Efficiency = 40%

TRANSISTORS

NPN SILICON

•

Intermodulation Distortion @ 100 W (PEP) —

IMD = –30 dB (Min)

100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

CASE 211–11, STYLE 1

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

3.0

Collector Current — Continuous

Withstand Current — 10 s

—

Total Device Dissipation @ T = 25°C

290

Watts

Derate above 25°C

1.66

W/°C

Storage Temperature Range

THERMAL CHARACTERISTICS

stg

–65 to +150

°C

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

0.6

°C/W

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (I = 50 mAdc, I = 0)

(BR)CEO

3.0

—

Vdc

Collector–Emitter Breakdown Voltage (I = 200 mAdc, V = 0)

(BR)CES

(BR)CBO

(BR)EBO

Collector–Base Breakdown Voltage (I = 200 mAdc, I = 0)

Vdc

Emitter–Base Breakdown Voltage (I = 10 mAdc, I = 0)

Vdc

Collector Cutoff Current (V = 16 Vdc, V = 0, T = 25°C)

CES

mAdc

(continued)

REV 1

12 3 4

中文翻译

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