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MRF421_17 PDF预览

MRF421_17

更新时间: 2024-11-19 01:23:35
品牌 Logo 应用领域
泰科 - TE /
页数 文件大小 规格书
5页 189K
描述
The RF Line NPN Silicon Power Transistor

MRF421_17 数据手册

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MRF421  
The RF Line NPN Silicon Power Transistor  
100W(PEP), 30MHz, 28V  
M/A-COM Products  
Released - Rev. 07.07  
Designed primarily for application as a high–power linear amplifier from 2.0  
to 30 MHz.  
Product Image  
Specified 12.5 V, 30 MHz characteristics —  
Output power = 100 W (PEP)  
Minimum gain = 10 dB  
Efficiency = 40%  
Intermodulation distortion @ 100 W (PEP) — IMD = –30 dB (min.)  
100% tested for load mismatch at all phase angles with 30:1 VSWR  
CASE 211–11, STYLE 1  
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions  
is considering for development. Performance is based on target specifications, simulated results,  
and/or prototype measurements. Commitment to develop is not guaranteed.  
North America Tel: 800.366.2266 / Fax: 978.366.2266  
Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300  
Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298  
Visit www.macomtech.com for additional data sheets and product information.  
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology  
Solutions has under development. Performance is based on engineering tests. Specifications are  
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.  
Commitment to produce in volume is not guaranteed.  
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make  
changes to the product(s) or information contained herein without notice.  

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