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MRF422

更新时间: 2024-09-13 04:14:39
品牌 Logo 应用领域
ASI 晶体射频双极晶体管放大器局域网
页数 文件大小 规格书
1页 21K
描述
NPN SILICON RF POWER TRANSISTOR

MRF422 技术参数

生命周期:Active包装说明:FLANGE MOUNT, O-CRFM-F4
针数:4Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.6
Is Samacsys:N最大集电极电流 (IC):20 A
集电极-发射极最大电压:35 V配置:SINGLE
最小直流电流增益 (hFE):10最高频带:HIGH FREQUENCY BAND
JESD-30 代码:O-CRFM-F4元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:NPN
最大功率耗散 (Abs):290 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:FLAT端子位置:RADIAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

MRF422 数据手册

  
MRF422/MP  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The ASI MRF422 is Designed for 2.0  
MHz to 30 MHz, 28 V High Power  
Linear Amplifier Applications. For hFE  
Matched Pairs Order ASI MRF422MP.  
PACKAGE STYLE .500 4L FLG  
MAXIMUM RATINGS  
20 A  
40 V  
I
V
290 W @ TC = 25 °C  
-65 °C to +150 °C  
-65 °C to +150 °C  
0.6 °C/W  
PDISS  
TJ  
1 = COLLECTOR  
3 = BASE  
TSTG  
θJC  
2 & 4 = EMITTER  
NONE  
CHARACTERISTICS TC = 25 °C  
SYMBOL  
BVCEO  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 200 mA  
IC = 100 mA  
IC = 100 mA  
IE = 10 mA  
35  
85  
85  
3.0  
V
BVCES  
BVCBO  
BVEBO  
ICES  
V
V
V
VCE = 28 V  
20  
mA  
---  
VCE = 5.0 V  
IC = 5.0 A  
10  
30  
120  
hFE  
V
CB = 28 V  
f = 1.0 MHz  
f = 30 MHz  
420  
Cob  
pF  
VCE = 28 V  
150  
10  
Pout  
W(PEP)  
13  
45  
-33  
GPE  
η
IMD  
dB  
%
dB  
VCC = 28 V  
IC(max) = 6.7 A  
ICQ = 150 mA  
Pout = 150 W (PEP)  
f = 30 MHz  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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