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MRF4427 PDF预览

MRF4427

更新时间: 2024-11-17 22:51:07
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体射频双极晶体管光电二极管放大器
页数 文件大小 规格书
6页 89K
描述
HIGH-FREQUENCY TRANSISTOR NPN SILICON

MRF4427 技术参数

是否Rohs认证:不符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.69Is Samacsys:N
最大集电极电流 (IC):0.4 A基于收集器的最大容量:3 pF
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):5最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PDSO-G8JESD-609代码:e0
元件数量:1端子数量:8
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):1.5 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):1600 MHzBase Number Matches:1

MRF4427 数据手册

 浏览型号MRF4427的Datasheet PDF文件第2页浏览型号MRF4427的Datasheet PDF文件第3页浏览型号MRF4427的Datasheet PDF文件第4页浏览型号MRF4427的Datasheet PDF文件第5页浏览型号MRF4427的Datasheet PDF文件第6页 
Order this document  
by MRF4427/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
Designed for amplifier, frequency multiplier, or oscillator applications in  
industrial equipment constructed with surface mount components. Suitable for  
use as output driver or pre–driver stages in VHF and UHF equipment.  
Low Cost SORF Plastic Surface Mount Package  
1.0 W, 175 MHz  
HIGH–FREQUENCY  
TRANSISTOR  
2
|
Guaranteed RF Specification — |S  
S–Parameter Characterization  
Low Voltage Version of MRF3866  
21  
NPN SILICON  
Tape and Reel Packaging Available.  
R2 suffix = 2,500 units per reel  
CASE 751–05, STYLE 1  
SORF  
(SO–8)  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
20  
Unit  
Vdc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CBO  
V
EBO  
40  
Vdc  
2.0  
Vdc  
Collector Current — Continuous  
I
C
400  
mAdc  
Total Device Dissipation @ T = 75°C  
Derate above 75°C  
P
D
1.67  
22.2  
Watts  
mW/°C  
C
Operating Junction and Storage Temperature Range  
T , T  
65 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
45  
°C/W  
θJC  
DEVICE MARKING  
MRF4427 = 4427  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Sustaining Voltage  
(I = 5.0 mAdc, I = 0)  
V
V
V
20  
40  
Vdc  
Vdc  
(BR)CEO  
(BR)CER  
(BR)EBO  
C
B
Collector–Emitter Breakdown Voltage  
(I = 5.0 mAdc, R = 10 ohms)  
C
BE  
Emitter–Base Breakdown Voltage (I = 100 µAdc)  
2.0  
Vdc  
E
Collector Cutoff Current (V  
CE  
= 12 Vdc, I = 0)  
I
20  
µAdc  
B
CEO  
NOTE:  
1.Case temperature measured on collector lead immediately adjacent to body of package.  
(continued)  
REV 8  
Motorola, Inc. 1997  

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