Datasheet > MRF429

MRF429

更新时间： 2024-11-04 22:51:07

品牌	Logo	应用领域
泰科 - TE		晶体晶体管局域网
页数	文件大小	规格书
5页	164K
描述
RF POWER TRANSISTOR NPN SILICON

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中文翻译

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技术参数
数据手册

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MRF429 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	针数：	4
Reach Compliance Code：	unknown	风险等级：	5.05
Is Samacsys：	N	最大集电极电流 (IC)：	16 A
配置：	Single	最小直流电流增益 (hFE)：	10
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	233 W	子类别：	Other Transistors
Base Number Matches：	1

MRF429 数据手册

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SEMICONDUCTOR TECHNICAL DATA

by MRF429/D

The RF Line

NP N S ilic on

Designed primarily for high–voltage applications as a high–power linear

amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.

•

Specified 50 Volt, 30 MHz Characteristics —

Output Power = 150 W (PEP)

Minimum Gain = 13 dB

150 W (LINEAR), 30 MHz

RF POWER

Efficiency = 45%

TRANSISTOR

•

Intermodulation Distortion @ 150 W (PEP) —

IMD = –32 dB (Max)

NPN SILICON

•

Diffused Emitter Resistors for Superior Ruggedness

100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

@ 150 W CW

CASE 211–11, STYLE 1

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

CBO

EBO

100

4.0

Collector Current — Continuous

Withstand Current — 10 s

—

Total Device Dissipation @ T = 25°C

233

Watts

Derate above 25°C

1.33

W/°C

Storage Temperature Range

THERMAL CHARACTERISTICS

stg

–65 to +150

°C

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

0.75

°C/W

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (I = 200 mAdc, I = 0)

(BR)CEO

—

Vdc

Collector–Emitter Breakdown Voltage (I = 100 mAdc, V = 0)

100

4.0

(BR)CES

(BR)CBO

(BR)EBO

Collector–Base Breakdown Voltage (I = 100 mAdc, I = 0)

Vdc

Emitter–Base Breakdown Voltage (I = 10 mAdc, I = 0)

Vdc

(continued)

12 3 4 5

中文翻译

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