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MRF421 PDF预览

MRF421

更新时间: 2024-11-17 22:24:11
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体射频双极晶体管放大器局域网
页数 文件大小 规格书
4页 107K
描述
RF POWER TRANSISTORS NPN SILICON

MRF421 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, O-CRFM-F4
Reach Compliance Code:unknown风险等级:5.06
Is Samacsys:N最大集电极电流 (IC):20 A
配置:SINGLE最小直流电流增益 (hFE):10
JESD-30 代码:O-CRFM-F4元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:FLANGE MOUNT极性/信道类型:NPN
功耗环境最大值:290 W最大功率耗散 (Abs):290 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:FLAT
端子位置:RADIAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MRF421 数据手册

 浏览型号MRF421的Datasheet PDF文件第2页浏览型号MRF421的Datasheet PDF文件第3页浏览型号MRF421的Datasheet PDF文件第4页 
Order this document  
by MRF421/D  
SEMICONDUCTOR TECHNICAL DATA  
The RF Line  
Designed primarily for application as a high–power linear amplifier from 2.0 to  
30 MHz.  
Specified 12.5 Volt, 30 MHz Characteristics —  
Output Power = 100 W (PEP)  
Minimum Gain = 10 dB  
100 W (PEP), 30 MHz  
RF POWER  
TRANSISTORS  
NPN SILICON  
Efficiency = 40%  
Intermodulation Distortion @ 100 W (PEP) —  
IMD = 30 dB (Min)  
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR  
CASE 211–11, STYLE 1  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
20  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
V
CEO  
V
CBO  
V
EBO  
45  
3.0  
20  
Collector Current — Continuous  
Withstand Current — 10 s  
I
C
30  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
290  
1.66  
Watts  
W/°C  
C
Storage Temperature Range  
THERMAL CHARACTERISTICS  
T
stg  
65 to +150  
°C  
Characteristic  
Thermal Resistance, Junction to Case  
Symbol  
Max  
Unit  
R
0.6  
°C/W  
θJC  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted.)  
C
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage (I = 50 mAdc, I = 0)  
V
(BR)CEO  
20  
45  
45  
3.0  
10  
Vdc  
Vdc  
C
B
Collector–Emitter Breakdown Voltage (I = 200 mAdc, V  
= 0)  
V
C
BE  
(BR)CES  
(BR)CBO  
(BR)EBO  
Collector–Base Breakdown Voltage (I = 200 mAdc, I = 0)  
V
V
Vdc  
C
E
Emitter–Base Breakdown Voltage (I = 10 mAdc, I = 0)  
Vdc  
E
C
Collector Cutoff Current (V  
CE  
= 16 Vdc, V  
= 0, T = 25°C)  
I
CES  
mAdc  
(continued)  
BE  
C
REV 1  
Motorola, Inc. 1997  

MRF421 替代型号

型号 品牌 替代类型 描述 数据表
MRF454 MACOM

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Bipolar
MRF421 MACOM

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Bipolar

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