Datasheet > MRF1803BR3

MRF1803BR3

更新时间： 2024-11-09 10:47:31

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管功率场效应晶体管射频
页数	文件大小	规格书
8页	271K
描述
THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERAL MOSFETS

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MRF1803BR3 数据手册

ꢒ ꢓꢎ ꢓ ꢀꢓ ꢔꢕ

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MRF18030B/D

The RF MOSFET Line

ꢀ ꢁ ꢂ ꢃꢄꢅ ꢆ ꢁꢇꢅ ꢈꢉ ꢊ ꢋꢋ ꢅ ꢌꢍ ꢎꢆ ꢏꢐ ꢑ ꢇꢑ ꢍꢃ ꢆ ꢑ

N–Channel Enhancement–Mode Lateral MOSFETs

Designed for GSM and EDGE base station applications with frequencies

from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

applications. Specified for GSM 1930 – 1990 MHz.

ꢒꢀ ꢁ ꢖꢗꢘꢙꢘ ꢚ ꢀꢙ

ꢒ

ꢀ

ꢁ

ꢖ

ꢗ

ꢘ

ꢙ

ꢘ

ꢚ

ꢛ

ꢀ

ꢙ

• Typical GSM Performance:

Power Gain – 14 dB (Typ) @ 30 Watts

Efficiency – 50% (Typ) @ 30 Watts

GSM/GSM EDGE 1.93 – 1.99 GHz,

30 W, 26 V

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency and High Linearity

• Integrated ESD Protection

LATERAL N–CHANNEL

RF POWER MOSFETs

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 26 Vdc, 30 W CW Output Power

• Excellent Thermal Stability

CASE 465E–03, STYLE 1

NI–400

MRF18030BR3

• Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm,

13 inch Reel.

CASE 465F–03, STYLE 1

NI–400S

MRF18030BSR3

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Vdc

Drain–Source Voltage

Gate–Source Voltage

DSS

+15, –0.5

Total Device Dissipation @ T = 25°C

Derate above 25°C

83.3

0.48

Watts

W/°C

Storage Temperature Range

Operating Junction Temperature

–65 to +200

200

°C

stg

ESD PROTECTION CHARACTERISTICS

Test Conditions

Class

Human Body Model

Machine Model

2 (Minimum)

M3 (Minimum)

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case

Symbol

Max

Unit

2.1

°C/W

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

REV 2

MOTOROLA RF DEVICE DATA

MRF18030BR3 MRF18030BSR3

 Motorola, Inc. 2002

12 3 4 5 6 7 8

中文翻译

下载PDF

与MRF1803BR3相关器件

型号	品牌	获取价格	描述	数据表
MRF1803BSR3	FREESCALE	获取价格	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERA
MRF1803BSR3	MOTOROLA	获取价格	THE RF MOSFET LINE RF POWER FIELD EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE LATERA
MRF18060A	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF18060A	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF18060ALR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF18060ALR3_08	FREESCALE	获取价格	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
MRF18060ALSR3	FREESCALE	获取价格	RF Power Field Effect Transistors
MRF18060ALSR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF18060AR3	MOTOROLA	获取价格	RF POWER FIELD EFFECT TRANSISTORS
MRF18060AS	MOTOROLA	获取价格	L BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 465A-06, 3 PIN