MMBV3700LT1

更新时间： 2024-09-19 22:51:11

品牌	Logo	应用领域
安森美 - ONSEMI		二极管测试高压
页数	文件大小	规格书
8页	57K
描述
High Voltage Silicon Pin Diodes

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MMBV3700LT1 数据手册

ON Semiconductort

MMBV3700LT1

MPN3700

High Voltage Silicon Pin Diodes

These devices are designed primarily for VHF band switching

applications but are also suitable for use in general–purpose switching

circuits. They are supplied in a cost–effective plastic package for

economical, high–volume consumer and industrial requirements.

They are also available in surface mount.

• Long Reverse Recovery Time t = 300 ns (Typ)

CASE 318–08, STYLE 8

SOT–23 (TO–236AB)

• Rugged PIN Structure Coupled with Wirebond Construction for

Optimum Reliability

Cathode

Anode

• Low Series Resistance @ 100 MHz – R = 0.7 Ohms (Typ) @

I = 10 mAdc

• Reverse Breakdown Voltage = 200 V (Min)

SOT–23

MAXIMUM RATINGS

Rating

Symbol

MPN3700

MMBV3700LT1

200

Unit

Reverse Voltage

Vdc

Total Power Dissipation

@ T = 25°C

Derate above 25°C

280

2.8

200

2.0

mW/°C

CASE 182–06, STYLE 1

TO–92 (TO–226AC)

Junction Temperature

Storage Temperature Range

+125

–55 to +150

°C

Cathode

Anode

stg

TO–92

DEVICE MARKING

MMBV3700LT1 = 4R

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage

(I = 10 µAdc)

200

–

Vdc

(BR)R

Diode Capacitance

(V = 20 Vdc, f = 1.0 MHz)

–

0.7

–

1.0

0.1

–

Ω

Series Resistance (Figure 5)

(I = 10 mAdc)

Reverse Leakage Current

(V = 150 Vdc)

µAdc

Reverse Recovery Time

300

(I = I = 10 mAdc)

Semiconductor Components Industries, LLC, 2001

Publication Order Number:

November, 2001 – Rev. 2

MMBV3700LT1D

12 3 4 5 6 7 8

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MMBV3700LT1 替代型号

型号	品牌	替代类型	描述	数据表
MMBV3700LT1G	ONSEMI	完全替代	High Voltage Silicon Pin Diodes
MPN3700G	ONSEMI	功能相似	High Voltage Silicon Pin Diodes

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