5秒后页面跳转
MMBV432LT1_06 PDF预览

MMBV432LT1_06

更新时间: 2024-09-20 04:14:59
品牌 Logo 应用领域
安森美 - ONSEMI 二极管
页数 文件大小 规格书
4页 48K
描述
Silicon Tuning Diode

MMBV432LT1_06 数据手册

 浏览型号MMBV432LT1_06的Datasheet PDF文件第2页浏览型号MMBV432LT1_06的Datasheet PDF文件第3页浏览型号MMBV432LT1_06的Datasheet PDF文件第4页 
MMBV432LT1  
Preferred Device  
Silicon Tuning Diode  
This device is designed for FM tuning, general frequency control  
and tuning, or any top−of−the−line application requiring  
back−to−back diode configuration for minimum signal distortion and  
detuning. This device is supplied in the SOT−23 plastic package for  
high volume, pick and place assembly requirements.  
http://onsemi.com  
Features  
High Figure of Merit − Q = 150 (Typ) @ V = 2.0 Vdc, f = 100 MHz  
R
DUAL VOLTAGE VARIABLE  
CAPACITANCE DIODE  
Guaranteed Capacitance Range  
Dual Diodes − Save Space and Reduce Cost  
Surface Mount Package  
Available in 8 mm Tape and Reel  
1
2
Monolithic Chip Provides Improved Matching −  
Guaranteed 1.0% (Max) Over Specified Tuning Range  
Pb−Free Package is Available  
3
3
MAXIMUM RATINGS (Each Diode)  
1
2
Rating  
Reverse Voltage  
Symbol  
Value  
14  
Unit  
Vdc  
V
I
R
SOT−23 (TO−236)  
CASE 318  
Forward Current  
200  
mAdc  
F
STYLE 9  
Total Power Dissipation @ T = 25°C  
P
225  
1.8  
mW  
mW/°C  
A
D
Derate above 25°C  
Junction Temperature  
Storage Temperature Range  
T
+125  
°C  
°C  
MARKING DIAGRAM  
J
T
stg  
55 to +125  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
M4B M G  
G
1
M4B = Specific Device Code  
M
= Date Code*  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBV432LT1  
SOT−23 3,000 / Tape & Reel  
MMBV432LT1G  
SOT−23 3,000 / Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 4  
MMBV432LT1/D  

与MMBV432LT1_06相关器件

型号 品牌 获取价格 描述 数据表
MMBV432LT1G ONSEMI

获取价格

Silicon Tuning Diode
MMBV609 LRC

获取价格

Silicon Tuning Diode
MMBV609LT1 ONSEMI

获取价格

Silicon Tuning Diode
MMBV609LT1 LRC

获取价格

Silicon Tuning Diode
MMBV609LT1 MOTOROLA

获取价格

UHF BAND, 20V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB, PLASTIC, CASE 31
MMBV609LT1_06 ONSEMI

获取价格

Silicon Tuning Diode
MMBV609LT1G ONSEMI

获取价格

Silicon Tuning Diode
MMBV609LT3 MOTOROLA

获取价格

UHF BAND, 20V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, PLASTIC, CASE 318-08, 3 PI
MMBV809 ETL

获取价格

Silicon Tuning Diode
MMBV809LT1 MOTOROLA

获取价格

Variable Capacitance Diode, Ultra High Frequency, 5.3pF C(T), 20V, Silicon, Hyperabrupt, T