MMBV809LT3

更新时间： 2024-01-26 05:00:07

品牌	Logo	应用领域
安森美 - ONSEMI		二极管变容二极管光电二极管
页数	文件大小	规格书
3页	47K
描述
Silicon Tuning Diode

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MMBV809LT3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	SOT-23	包装说明：	LEAD FREE, CASE 318-08, TO-236, 3 PIN
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.13	Is Samacsys：	N
其他特性：	HIGH RELIABILITY	最小击穿电压：	20 V
配置：	SINGLE	二极管电容容差：	15.09%
最小二极管电容比：	1.8	标称二极管电容：	5.3 pF
二极管元件材料：	SILICON	二极管类型：	VARIABLE CAPACITANCE DIODE
频带：	ULTRA HIGH FREQUENCY	JEDEC-95代码：	TO-236AB
JESD-30 代码：	R-PDSO-G3	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	最大功率耗散：	0.225 W
认证状态：	Not Qualified	最小质量因数：	75
最大重复峰值反向电压：	20 V	子类别：	Varactors
表面贴装：	YES	端子面层：	Tin (Sn)
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	40	变容二极管分类：	HYPERABRUPT
Base Number Matches：	1

MMBV809LT3 数据手册

MMBV809LT1

Preferred Device

Silicon Tuning Diode

This device is designed for 900 MHz frequency control and tuning

applications. It provides solid−state reliability in replacement of

mechanical tuning methods.

Features

http://onsemi.com

• Controlled and Uniform Tuning Ratio

• Available in Surface Mount Package

• Available in 8 mm Tape and Reel

• Pb−Free Packages are Available

4.5−6.1 pF VOLTAGE VARIABLE

CAPACITANCE DIODE

MAXIMUM RATINGS

CATHODE

ANODE

Rating

Reverse Voltage

Symbol

Value

Unit

Vdc

Forward Current

mAdc

SOT−23 (TO−236)

CASE 318

Total Power Dissipation (Note 1)

@ T = 25°C

225

1.8

mW/°C

STYLE 8

Derate above 25°C

Junction Temperature

+125

°C

Storage Temperature Range

stg

−55 to +125

MARKING DIAGRAM

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

5K M G

1. FR5 Board 1.0 x 0.75 x 0.62 in.

5K = Specific Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MMBV809LT1

SOT−23

3,000 / Tape & Reel

MMBV809LT1G SOT−23

(Pb−Free)

3,000 / Tape & Reel

MMBV809LT3

SOT−23 10,000 / Tape & Reel

MMBV809LT3G SOT−23 10,000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

January, 2006 − Rev. 4

MMBV809LT1/D

12 3

中文翻译

下载PDF

与MMBV809LT3相关器件

型号	品牌	获取价格	描述	数据表
MMBV809LT3G	ONSEMI	获取价格	Silicon Tuning Diode
MMBZ10CA	SWST	获取价格	瞬态电压抑制管
MMBZ10CA-AH	SWST	获取价格	瞬态电压抑制管
MMBZ10VA	WEITRON	获取价格	SMALL SIGNAL ZENER DIODES 300m WATTS 3-26 VOLTS
MMBZ10VAL	DIODES	获取价格	24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS
MMBZ10VAL	ONSEMI	获取价格	24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ10VAL	NEXPERIA	获取价格	Low capacitance unidirectional double ESD protection diodeProduction
MMBZ10VAL,215	NXP	获取价格	MMBZxAL series - Low capacitance unidirectional double ESD protection diodes TO-236 3-Pin
MMBZ10VAL-7	DIODES	获取价格	Trans Voltage Suppressor Diode, 24W, 6.5V V(RWM), Unidirectional, 2 Element, Silicon, PLAS
MMBZ10VAL-7-F	DIODES	获取价格	24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS

产品中心

服务支持

精选活动

关于我们

帮助中心

MMBV809LT3

MMBV809LT3 技术参数

MMBV809LT3 数据手册

与MMBV809LT3相关器件

与MMBV809LT3相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MMBV809LT3

MMBV809LT3 技术参数

MMBV809LT3 数据手册

与MMBV809LT3相关器件

与MMBV809LT3相关文章

您还可以找

您在本页遇到什么问题？