Datasheet > MMBZ10VAL-Q

MMBZ10VAL-Q

更新时间： 2023-09-03 20:32:49

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	210K
描述
Low capacitance unidirectional double ESD protection diodeProduction

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MMBZ10VAL-Q 数据手册

MMBZ10VAL-Q

Low capacitance unidirectional double ESD protection diode

13 June 2022

Product data sheet

1. General description

Unidirectional double ElectroStatic Discharge (ESD) protection diode in a common anode

configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic

package. The device is designed for ESD and transient overvoltage protection of up to two signal

lines.

2. Features and benefits

•

Unidirectional ESD protection of two lines

•

Bidirectional ESD protection of one line

Low diode capacitance: C_d≤ 170 pF

Rated peak pulse power: P_PPM= 24 W

Ultra low leakage current: I_RM= 20 nA

ESD protection up to 30 kV (contact discharge)

IEC 61000-4-2; level 4 (ESD)

IEC 61643-321

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Computers and peripherals

Audio and video equipment

Cellular handsets and accessories

Automotive electronic control units

Portable electronics

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

6.5

C_d

diode capacitance

f = 1 MHz; V_R= 0 V; T_amb= 25 °C

130

170

12 3 4 5 6 7...11

中文翻译

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