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MMBV432LT1G PDF预览

MMBV432LT1G

更新时间: 2024-09-20 04:14:59
品牌 Logo 应用领域
安森美 - ONSEMI 二极管变容二极管光电二极管配套器件
页数 文件大小 规格书
4页 48K
描述
Silicon Tuning Diode

MMBV432LT1G 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:SOT-23包装说明:LEAD FREE, PLASTIC, CASE 318-08, TO-236, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.15Is Samacsys:N
其他特性:HIGH Q, 1% MATCHING GUARANTEED最小击穿电压:14 V
配置:COMMON CATHODE, 2 ELEMENTS二极管电容容差:5.6%
最小二极管电容比:1.5标称二极管电容:45.55 pF
二极管元件材料:SILICON二极管类型:VARIABLE CAPACITANCE DIODE
频带:VERY HIGH FREQUENCYJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.225 W
认证状态:Not Qualified最小质量因数:100
最大重复峰值反向电压:14 V子类别:Varactors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40变容二极管分类:ABRUPT
Base Number Matches:1

MMBV432LT1G 数据手册

 浏览型号MMBV432LT1G的Datasheet PDF文件第2页浏览型号MMBV432LT1G的Datasheet PDF文件第3页浏览型号MMBV432LT1G的Datasheet PDF文件第4页 
MMBV432LT1  
Preferred Device  
Silicon Tuning Diode  
This device is designed for FM tuning, general frequency control  
and tuning, or any top−of−the−line application requiring  
back−to−back diode configuration for minimum signal distortion and  
detuning. This device is supplied in the SOT−23 plastic package for  
high volume, pick and place assembly requirements.  
http://onsemi.com  
Features  
High Figure of Merit − Q = 150 (Typ) @ V = 2.0 Vdc, f = 100 MHz  
R
DUAL VOLTAGE VARIABLE  
CAPACITANCE DIODE  
Guaranteed Capacitance Range  
Dual Diodes − Save Space and Reduce Cost  
Surface Mount Package  
Available in 8 mm Tape and Reel  
1
2
Monolithic Chip Provides Improved Matching −  
Guaranteed 1.0% (Max) Over Specified Tuning Range  
Pb−Free Package is Available  
3
3
MAXIMUM RATINGS (Each Diode)  
1
2
Rating  
Reverse Voltage  
Symbol  
Value  
14  
Unit  
Vdc  
V
I
R
SOT−23 (TO−236)  
CASE 318  
Forward Current  
200  
mAdc  
F
STYLE 9  
Total Power Dissipation @ T = 25°C  
P
225  
1.8  
mW  
mW/°C  
A
D
Derate above 25°C  
Junction Temperature  
Storage Temperature Range  
T
+125  
°C  
°C  
MARKING DIAGRAM  
J
T
stg  
55 to +125  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
M4B M G  
G
1
M4B = Specific Device Code  
M
= Date Code*  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation and/or overbar may  
vary depending upon manufacturing location.  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MMBV432LT1  
SOT−23 3,000 / Tape & Reel  
MMBV432LT1G  
SOT−23 3,000 / Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 4  
MMBV432LT1/D  

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