MMBV609LT1G

更新时间： 2024-01-24 07:30:48

品牌	Logo	应用领域
安森美 - ONSEMI		二极管变容二极管光电二极管
页数	文件大小	规格书
3页	46K
描述
Silicon Tuning Diode

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MMBV609LT1G 技术参数

是否无铅：	不含铅	生命周期：	End Of Life
零件包装代码：	SOT-23	包装说明：	HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, CASE 318-08, 3 PIN
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.14	Is Samacsys：	N
其他特性：	HIGH Q	最小击穿电压：	20 V
配置：	COMMON CATHODE, 2 ELEMENTS	二极管电容容差：	10.34%
最小二极管电容比：	1.8	标称二极管电容：	29 pF
二极管元件材料：	SILICON	二极管类型：	VARIABLE CAPACITANCE DIODE
频带：	VERY HIGH FREQUENCY	JEDEC-95代码：	TO-236AB
JESD-30 代码：	R-PDSO-G3	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	2
端子数量：	3	最高工作温度：	125 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
最大功率耗散：	0.225 W	认证状态：	Not Qualified
最小质量因数：	250	最大重复峰值反向电压：	20 V
子类别：	Varactors	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	40
变容二极管分类：	HYPERABRUPT	Base Number Matches：	1

MMBV609LT1G 数据手册

MMBV609LT1

Preferred Device

Silicon Tuning Diode

This device is designed for FM tuning, general frequency control

and tuning, or any top−of−the−line application requiring

back−to−back diode configuration for minimum signal distortion and

detuning. This device is supplied in the SOT−23 plastic package for

high volume, pick and place assembly requirements.

http://onsemi.com

Features

• High Figure of Merit − Q = 450 (Typ) @ V = 3.0 Vdc, f = 50 MHz

DUAL VOLTAGE VARIABLE

CAPACITANCE DIODE

• Guaranteed Capacitance Range

• Dual Diodes − Save Space and Reduce Cost

• Surface Mount Package

• Available in 8 mm Tape and Reel

• Monolithic Chip Provides Improved Matching

• Hyper Abrupt Junction Process Provides High Tuning Ratio

• Pb−Free Package is Available

MAXIMUM RATINGS (EACH DIODE)

SOT−23 (TO−236)

CASE 318

Rating

Reverse Voltage

Symbol

Value

Unit

Vdc

STYLE 9

Forward Current

100

mAdc

Total Power Dissipation @ T = 25°C

225

1.8

mW/°C

Derate above 25°C

MARKING DIAGRAM

Junction Temperature

Storage Temperature Range

+125

°C

stg

−55 to +125

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

5L M G

5L = Specific Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MMBV609LT1

SOT−23 3,000 / Tape & Reel

MMBV609LT1G

SOT−23 3,000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

January, 2006 − Rev. 3

MMBV609LT1/D

12 3

中文翻译

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与MMBV609LT1G相关器件

型号	品牌	获取价格	描述	数据表
MMBV609LT3	MOTOROLA	获取价格	UHF BAND, 20V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, PLASTIC, CASE 318-08, 3 PI
MMBV809	ETL	获取价格	Silicon Tuning Diode
MMBV809LT1	MOTOROLA	获取价格	Variable Capacitance Diode, Ultra High Frequency, 5.3pF C(T), 20V, Silicon, Hyperabrupt, T
MMBV809LT1	ONSEMI	获取价格	Silicon Tuning Diode
MMBV809LT1	LRC	获取价格	Silicon Tuning Diode
MMBV809LT1	ETL	获取价格	Silicon Tuning Diode
MMBV809LT1	ROCHESTER	获取价格	UHF BAND, 5.3 pF, 20 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB, CASE 31
MMBV809LT1_06	ONSEMI	获取价格	Silicon Tuning Diode
MMBV809LT1G	ONSEMI	获取价格	Silicon Tuning Diode
MMBV809LT1G	ROCHESTER	获取价格	UHF BAND, 5.3 pF, 20 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB, LEAD FR

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