MMBV809LT1G

更新时间： 2024-01-30 22:12:54

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
3页	47K
描述
Silicon Tuning Diode

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中文翻译

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数据手册

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MMBV809LT1G 数据手册

MMBV809LT1

Preferred Device

Silicon Tuning Diode

This device is designed for 900 MHz frequency control and tuning

applications. It provides solid−state reliability in replacement of

mechanical tuning methods.

Features

http://onsemi.com

• Controlled and Uniform Tuning Ratio

• Available in Surface Mount Package

• Available in 8 mm Tape and Reel

• Pb−Free Packages are Available

4.5−6.1 pF VOLTAGE VARIABLE

CAPACITANCE DIODE

MAXIMUM RATINGS

CATHODE

ANODE

Rating

Reverse Voltage

Symbol

Value

Unit

Vdc

Forward Current

mAdc

SOT−23 (TO−236)

CASE 318

Total Power Dissipation (Note 1)

@ T = 25°C

225

1.8

mW/°C

STYLE 8

Derate above 25°C

Junction Temperature

+125

°C

Storage Temperature Range

stg

−55 to +125

MARKING DIAGRAM

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

5K M G

1. FR5 Board 1.0 x 0.75 x 0.62 in.

5K = Specific Device Code

= Date Code*

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

MMBV809LT1

SOT−23

3,000 / Tape & Reel

MMBV809LT1G SOT−23

(Pb−Free)

3,000 / Tape & Reel

MMBV809LT3

SOT−23 10,000 / Tape & Reel

MMBV809LT3G SOT−23 10,000 / Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

January, 2006 − Rev. 4

MMBV809LT1/D

12 3

中文翻译

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