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MMBV409 PDF预览

MMBV409

更新时间: 2024-02-05 13:26:01
品牌 Logo 应用领域
ETL 二极管
页数 文件大小 规格书
2页 103K
描述
Silicon Tuning Diode

MMBV409 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT-23包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.82其他特性:HIGH Q
最小击穿电压:20 V配置:SINGLE
二极管电容容差:10.34%最小二极管电容比:1.5
标称二极管电容:29 pF二极管元件材料:SILICON
二极管类型:VARIABLE CAPACITANCE DIODE频带:VERY HIGH FREQUENCY
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.225 W认证状态:Not Qualified
最小质量因数:200最大重复峰值反向电压:20 V
最大反向电流:0.1 µA反向测试电压:15 V
子类别:Varactors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
变容二极管分类:HYPERABRUPTBase Number Matches:1

MMBV409 数据手册

 浏览型号MMBV409的Datasheet PDF文件第2页 
Silicon Tuning Diode  
MMBV409LT1  
MV409  
This device is designed in the surface Mount package for general frequency  
control and tuning applications.It provides solid-state reliability in replacement of  
mechanical tuning methods.  
VOLTAGE VARIABLE  
CAPACITANCE DIODES  
High Q with Guaranteed Minimum Values at VHF Frequencies  
• Controlled and Uniform Tuning Ratio  
• Available in Surface Mount Package  
3
1
3
1
ANODE  
CATHODE  
2
CASE 318–08, STYLE 8  
SOT– 23 (TO–236AB)  
MAXIMUM RATINGS(EACH DIODE)  
Rating  
Symbol  
MBV409 MMBV409LT1 Unit  
Reverse Voltage  
V
20  
20  
Vdc  
mAdc  
mW  
R
Forward Current  
I F  
200  
280  
2.8  
200  
225  
1.8  
Device Dissipation @T A = 25°C  
Derate above 25°C  
P
D
mW/°C  
°C  
Junction Temperature  
Storage Temperature Range  
DEVICE MARKING  
MMBV409LT1=X5,MV409=MV409  
T J  
+125  
–55 to +150  
T stg  
°C  
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)  
Characteristic  
Reverse Breakdown Voltage  
(IR=10µAdc)  
Symbol  
Min  
Typ  
Max  
Unit  
V (BR)R  
20  
Vdc  
Reverse Voltage Leakage Current  
(VR=15Vdc)  
I
0.1  
µAdc  
R
Diode Capacitance Temperature Coefficient  
TCC  
300  
ppm/°C  
CR,Capacitance Ratio  
C3/C8  
CTDiode Capacitance  
VR=3.0Vdc,f=1.0MHz  
pF  
Q,Figure of Merit  
VR=3.0Vdc  
Device Type  
f=1.0MHz(1)  
f=50MHz  
Min  
Nom  
Max  
Min  
Min  
Max  
MMBV409LT1,MV409  
26  
29  
32  
200  
1.5  
1.9  
1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 8 vdc  
I2–1/2  

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